Tencor Instruments

David Wolze

Armand P Neukermans

Stanley E Stokowski

Ralph C Wolf

Peter C Jann

Stanley Stokowksi

A method and apparatus for predicting the number of contaminant particles in circuit area of a patterned semiconductor wafer having a number of reflective circuit areas. The method includes forming on a wafer in specified areas, a grating test pattern, such as a line grating. The grating patterns are formed at the same time and in the same manner that repetitive circuit patterns are formed on the wafer. The wafer is then scanned by a light beam. Since the diffraction pattern caused by the grating test patterns is known, it is possible to detect when the light beam is scanning one of the known grating patterns. The diffraction pattern may be inspected for fabrication derived variations. In response to detecting a known grating pattern, a detection mechanism is activated. Since the diffraction pattern is known it may be spatially separated. In this way only light scattered by particles or defects in the pattern are collected and detected. From the scattered light that is collected and detected, a particle count may be determined for the grating pattern area. From this particle count an accurate prediction of the number of particles in the circuit patterns may be made. The apparatus may also inspect bare areas. In this manner real time inspection may be performed on patterned wafers.

Particle detection on a patterned or bare wafer surface

Methods for determining the presence or absence of, and the thickness or other spacial extent of, a contaminant layer at each of a plurality of two or more sites on the surface of an electrically conductive material such as a semiconductor, a metal or a metal silicide. The invention uses a change in photoemission current from an illuminated spot on the surface to determine the presence and extent of a contaminant layer at the illuminated site. Compensation is provided for the effects of capacitive current and photovoltaic current. The invention provides a pattern of illumination sites on the conductor surface that can, if desired, cover all points on the surface.

Photoemission contaminant detector

Method and apparatus for determining the amount, if any, of residue remaining at the bottom of an aperture in a layer of dielectric or insulator material. A layer of electrically conducting material is positioned adjacent to the aperture bottom, an electron collector is positioned adjacent to the mouth of the aperture, and a voltage difference (optional) is impressed between the conducting material and the electron collector. The aperture bottom is illuminated with a light beam with photon energy greater than the electron work function of the conducting material, and a portion of the photons that comprise the light beam reach the conducting material and produce photoelectrons by photoemissive action. A photoelectron current is sensed by the electron collector, and the cleanliness of the aperture bottom is determined from the value of the current.

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San Jose, CA, United States of America

David Wolze