Kla-tencor Technologies Corporation

Kla Tencor Corporation

Other

David W Shortt

Christopher F Bevis

George J Kren

Daniel Ivanov Kavaldjiev

Paul J Sullivan

Stephen Biellak

Christian Wolters

Rodney C Smedt

Hans J Hansen

Ilya Bezel

Lisheng Gao

Anatoly Shchemelinin

Kenong Wu

Kenneth P Gross

Matthew Derstine

Grace Hsiu-Ling Chen

Kurt Lindsay Haller

Wei Zhao

Andrew V Hill

Robert M Danen

Steven R Lange

Anant Chimmalgi

Pavel Kolchin

Grace Jing Chen

Mikhail Haurylau

Alexander Belyaev

Evan R Mapoles

Jincheng Wang

Stefano Palomba

Yung-Ho Alex Chuang

Mehdi Vaez-Iravani

Guoheng Zhao

Michael D Kirk

Anatoly Romanovsky

Ivan Maleev

Bret Whiteside

Donald Pettibone

Brian L Haas

Aleksey Petrenko

Amith Kumar Murali

Charles Amsden

Junwei Wei

Jijen Vazhaeparambil

Daniel Kapp

Mike D Kirk

Geroge Kren

Systems and methods for determining information for defects on a wafer are provided. One system includes an illumination subsystem configured to direct light having one or more illumination wavelengths to a wafer. The one or more illumination wavelengths are selected to cause fluorescence from one or more materials on the wafer without causing fluorescence from one or more other materials on the wafer. The system also includes a detection subsystem configured to detect only the fluorescence from the one or more materials or to detect non-fluorescent light from the wafer without detecting the fluorescence from the one or more materials. In addition, the system includes a computer subsystem configured to determine information for defects on the wafer using output generated by the detection subsystem responsive to the detected fluorescence or the detected non-fluorescent light.

Determining information for defects on wafers

Methods and systems for accurately locating buried defects previously detected by an inspection system are described herein. A physical mark is made on the surface of a wafer near a buried defect detected by an inspection system. In addition, the inspection system accurately measures the distance between the detected defect and the physical mark in at least two dimensions. The wafer, an indication of the nominal location of the mark, and an indication of the distance between the detected defect and the mark are transferred to a material removal tool. The material removal tool (e.g., a focused ion beam (FIB) machining tool) removes material from the surface of the wafer above the buried defect until the buried defect is made visible to an electron-beam based measurement system. The electron-beam based measurement system is subsequently employed to further analyze the defect.

Defect marking for semiconductor wafer inspection

A wafer scanning system includes imaging collection optics to reduce the effective spot size. Smaller spot size decreases the number of photons scattered by the surface proportionally to the area of the spot. Air scatter is also reduced. TDI is used to produce a wafer image based on a plurality of image signals integrated over the direction of linear motion of the wafer. An illumination system floods the wafer with light, and the task of creating the spot is allocated to the imaging collection optics.

TDI sensor in a darkfield system

A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a bulb-less gas containment structure, and a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb-less gas containment structure. Further, the plasma is generated within a concave region of the collector element, where the collector element includes an opening through the collector element for propagating a portion of a plume of the plasma from a first region of the bulb-less gas containment structure to a second region of the bulb-less gas containment structure, wherein the first region of the bulb-less gas containment structure and the second region of the bulb-less gas containment structure are at least partially separated by a surface of the collector element.

Method and system for controlling convective flow in a light-sustained plasma

Methods and systems for detecting defects on a wafer using defect-specific and multi-channel information are provided. One method includes acquiring information for a target on a wafer. The target includes a pattern of interest (POI) formed on the wafer and a known defect of interest (DOI) occurring proximate to or in the POI. The method also includes detecting the known DOI in target candidates by identifying potential DOI locations based on images of the target candidates acquired by a first channel of an inspection system and applying one or more detection parameters to images of the potential DOI locations acquired by a second channel of the inspection system. Therefore, the image(s) used for locating potential DOI locations and the image(s) used for detecting defects can be different.

Detecting defects on a wafer using defect-specific and multi-channel information

The inspection of a sample with VUV light from a laser sustained plasma includes generating pumping illumination including a first selected wavelength, or range of wavelength, containing a volume of gas suitable for plasma generation, generating broadband radiation including a second selected wavelength, or range of wavelengths, by forming a plasma within the volume of gas by focusing the pumping illumination into the volume of gas, illuminating a surface of a sample with the broadband radiation emitted from the plasma via an illumination pathway, collecting illumination from a surface of the sample, focusing the collected illumination onto a detector via a collection pathway to form an image of at least a portion of the surface of the sample and purging the illumination pathway and/or the collection pathway with a selected purge gas.

System and method for imaging a sample with a laser sustained plasma illumination output

A system for controlling convective flow in a light-sustained plasma includes an illumination source configured to generate illumination, a plasma cell including a bulb for containing a volume of gas, a collector element arranged to focus illumination from the illumination source into the volume of gas in order to generate a plasma within the volume of gas contained within the bulb. Further, the plasma cell is disposed within a concave region of the collector element, where the collector element includes an opening for propagating a portion of a plume of the plasma to a region external to the concave region of the collect element.

The invention may be embodied in a time delay integration (TDI) based sensor wafer inspection system that introduces controlled blur into the sampled image to suppress high spectral frequencies and thereby mitigate the occurrence of aliasing in the sampled image. Image blur may be introduced in the scan direction by desynchronizing the image motion (scan rate) from the charge transfer rate within the TDI sensor (sample clock rate). The scan rate may be desynchronized from the TDI sample clock rate by altering the speed of wafer movement, the sample clock rate, or the magnification of the imaging optics. Image blur may be introduced in the cross-scan direction by imparting a small alignment difference between the direction of image motion (image scan direction) and the direction that charges transfer within the TDI sensor (sensor direction).

Method for reducing aliasing in TDI based imaging

Systems and methods for inspecting a specimen are provided. One system includes an illumination subsystem configured to direct light to the specimen at an oblique angle of incidence. The light is polarized in a plane that is substantially parallel to the plane of incidence. The system also includes a detection subsystem configured to detect light scattered from the specimen. The detected light is polarized in a plane that is substantially parallel to the plane of scattering. In addition, the system includes a processor configured to detect defects on the specimen using signals generated by the detection subsystem. In one embodiment, such a system may be configured to detect defects having a size that is less than half of a wavelength of the light directed to the specimen.

Systems and methods for inspecting specimens including specimens that have a substantially rough uppermost layer

A taping tool apparatus having an elongated hammer portion that has a central axis and a striker portion, the striker portion having a striking plane perpendicular to the hammer portion central axis; a blade affixed to the hammer portion so that no part of the blade crosses the striker portion striking plane; and a handle affixed to the elongated hammer portion perpendicular to the central axis, whereby a user applying mud to fill indents in drywall with the taping tool can rotate the apparatus a quarter turn to hammer down any raised nails encountered without the blade striking the drywall.

Taping knife with hammer

A wafer having improved inspection sensitivity to foreign matter on a top-most surface of the wafer, as detected with a surface scanning optical inspection system that uses an inspection wavelength. The wafer includes a substantially homogenous first layer at the top-most surface of the wafer, the first layer having a first thickness. The first layer is at least partially transparent to the inspection wavelength. A substantially homogenous second layer immediately underlies the first layer, the second layer having a second thickness. The second layer is at least partially transparent to the inspection wavelength. A substrate immediately underlies the second layer. The first thickness and the second thickness are set in a combination that produces a local minimum of an electric field at the top-most surface and a local maximum of an electric field within one hundred nanometers above the top-most surface.

Defect detection

Growing community of inventors

Milpitas, CA, United States of America

David W Shortt