Agilent Technologies, Inc.

David W Hula

Robert G Long

Mark D Crook

Ricky D Snyder

Philip Gene Nikkel

An integrated circuit metallization structure using a titanium/aluminum alloy, and a method to generate such a structure, provide reduced leakage current by allowing mobile impurities such as water, oxygen, and hydrogen to passivate structural defects in the silicon layer of the IC. The titanium layer of the structure is at least partially alloyed with the aluminum layer, thereby restricting the ability of the titanium to getter the mobile impurities within the various layers of the IC. Despite the alloying of the titanium and aluminum, the metallization structure exhibits the superior contact resistance and electromigration properties associated with titanium.

Integrated circuit metallization using a titanium/aluminum alloy

An optical barrier made of tungsten (W) or titanium-tungsten (TiW). A layer of the optical barrier material is deposited over a transparent layer such as indium tin oxide (ITO). The optical barrier material is then patterned using photolithography processing steps and a dry etchant. The patterned optical barrier material acts as a light-shielding layer over a light-sensing device to form a dark reference device or dark pixel.

Optical barrier and methods for forming the optical barrier without etching a transparent layer below the optical barrier

Metallic optical barrier for photo-detector array is also interconnecting electrode

An optical barrier made of tungsten (W) or titanium-tungsten (TiW). A layer of the optical barrier material is deposited over a transparent layer such as indium tin oxide (ITO). The optical barrier material is then patterned using photolithography processing steps and hydrogen peroxide as an etchant. The patterned optical barrier material acts as a light-shielding layer over a light-sensing device to form a dark reference device or dark pixel.

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David W Hula