At&t Bell Laboratories

Other

David S Williams

Hyman J Levinstein

William T Lynch

Ruichen Liu

Shyam P Murarka

A new method for fabricating a semiconductor device, e.g., a MOS or MES IC, as well as the resulting device, are disclosed. In accordance with the new method, a semiconductor device is formed, at least in part, by forming a material region which includes metal, e.g., elemental metal or a metal-containing compound, on a semiconductor substrate. One or more dopants are implanted into the material region, and the substrate is heated in order to diffuse the dopants out of the material region and into the substrate, thus forming a dopant-diffused substrate region, e.g., a source or drain. Significantly, the new method involves implant conditions which yield a material region-to-substrate specific contact resistance equal to or less than about 10.sup.-6 .OMEGA.-cm.sup.2. In addition, the new method involves heating temperatures and heating times which yield a dopant-diffused substrate region having a depth, relative to the top of the material region, equal to or less than about 0.2 micrometers.

Method for fabricating semiconductor devices which include sources and

An attachment for a portable jig saw permits a concurrent use of a pair of jig saw blades. The blades are each attached to a holder by threaded fasteners, while the holder is then threadably attached to the jig saw. The spacing between the blades may be varied by an adjustment of the holder.

Dual blade saw attachment

It has been found that stress in X-ray transparent films used to form masks for X-ray lithography also cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. A method is disclosed which anneals boron nitride films for use in X-ray masks in such a way as to control stress.

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Convent Station, NJ, United States of America

David S Williams