Applied Materials, Inc.

Revera, Incorporated

Revara, Incorporated

David S Ballance

Benjamin B Bierman

James V Tietz

David Allen Reed

Bruno W Schueler

Michael C Kwan

Brian L Haas

Paul L Deaton

Paola deCecco

Meredith J Williams

Robert M Haney

David W LaCourt

Paolo deCecco

Nobuyuki Takahashi

A method to determine a distribution profile of an element in a film. The method comprises exciting an electron energy of an element deposited in a first film, obtaining a first spectrum associating with the electron energy, and removing a background spectrum from the first spectrum. Removing the background value generates a processed spectrum. The method further includes matching the processed spectrum to a simulated spectrum with a known simulated distribution profile for the element in a film comparable to the first film. A distribution profile is obtained for the element in the first film based on the matching of the processed spectrum to a simulated spectrum selected from the set of simulated spectra.

Method and system for non-destructive distribution profiling of an element in a film

A substrate support comprising a shelf having a surface sloped at an angle such that the support contacts the substrate substantially at an edge portion of the substrate. The angle of the shelf is greater than an angle of the edge portion of the substrate. The surface of the shelf may be machined or polished to improve its smoothness. The substrate support thereby reduces the effect and severity of scratches on the substrate caused by the support. As a result, the substrate support improves substrate yield.

Sloped substrate support

An apparatus to isolate a rotating frame in a processing chamber, comprising: a support cylinder rotatably extending from the rotating frame; and a co-rotating edge ring extension extending from the support cylinder to at least one of substantially thermally, optically and mechanically isolate the region above the co-rotating edge ring extension from the region below the co-rotating edge ring extension.

Co-rotating edge ring extension for use in a semiconductor processing

A method for controlling the temperature of a substrate in a processing chamber. The processing chamber employs a heating control over at least two heating zones. Each heating zone is independently controllable according to a measured signal corresponding to the substrate temperature and a user-definable offset.

Method and apparatus for achieving temperature uniformity of a substrate

A showerhead for introducing gas from one or more external supplies into a substrate processing chamber, the showerhead including a faceplate including a plurality of gas injection ports through which gas is injected into the chamber, wherein the plurality of gas injection ports includes a first subset of gas injection ports and a second subset of gas injection ports; a first gas distribution system which during use delivers a first gas to the first subset of injection ports for injection into the chamber; and a second gas distribution system which during use delivers a second gas to the second subset of injection ports for injection into the chamber.

Multi-zone gas flow control in a process chamber

In one embodiment, the invention is directed to an apparatus for preventing depositions from occurring on a reflector in a processing chamber, comprising: a cover disposed adjacent to the reflector, the cover optically transparent over a range of wavelengths in which the reflector is reflective; and at least one cover support for maintaining the position of the cover relative to the reflector.

Reflector cover for a semiconductor processing chamber

An apparatus for purging the backside of a substrate in a process chamber includes a purge gas injector. The injector includes a substantially annular-shaped opening providing a slit that is structured and arranged to direct a flow of purge gas about radially outward therefrom in a direction approximately parallel to a plane defined by the substrate, wherein the substrate is supported in the process chamber above the purge gas injector. When the substrate is rotated at a sufficient speed, the purge gas flowing from the injector is impelled to flow spirally outward along the backside of the substrate.

Method and apparatus for purging the back side of a substrate during

A method of reducing stress on a substrate in a thermal processing chamber. The method includes the steps of supporting a first portion of a substrate by means of contacting the same such that a second portion of the substrate is not contacted, part of the second portion forming one wall of a cavity, and flowing a gas into the cavity such that the pressure of the gas exerts a force on the second portion to at least partially support the second portion.

Method for gaseous substrate support

A method of processing a disk-shaped substrate, or wafer, during a chemical vapor process includes a backside purge of the substrate with a purge gas. The backside purge is obtained by spinning the substrate about a central axis, directing a flow of the purge gas over the backside of the spinning substrate, and causing the purge gas to flow in an outward radial direction with the spinning substrate. An apparatus in a vapor processing system structured for conducting the backside purge includes a support mechanism structured and arranged to support the substrate and spin the substrate about a central axis, and a conduit coupled to a source of purge gas, structured and arranged to direct a flow of the purge gas over a backside of the substrate while the substrate is spinning such that the spinning substrate causes the purge gas to flow radially outward.

An annular-shaped edge ring support for a semiconductor wafer has an innermost radial portion for supporting the semiconductor wafer and an outermost radial portion contiguous with the inner portion. The inner portion has a graded thermal mass that generally increases with increasing radius.

Semiconductor wafer support with graded thermal mass

A showerhead for use with a lamp head in a thermal processing chamber, the lamp head including a high intensity source which emits radiation that heats a substrate within the chamber, the showerhead including a top window on a side of the showerhead that is adjacent to the lamp head; a bottom window on a side of the showerhead that is adjacent to the substrate during processing; and a gas supply inlet through which a gas is introduced into a space between the top and bottom windows, wherein the top and bottom windows are transparent to the radiation from the source in the lamp head and wherein the bottom window includes a plurality of gas distribution holes through which gas is injected from the space between the top and bottom windows into the chamber.

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Cupertino, CA, United States of America

David S Ballance