International Business Machines Corporation

Lnternational Business Machines Corporation

David Robert Medeiros

Wayne Martin Moreau

Wu-Song S Huang

Marie Angelopoulos

Dirk Pfeiffer

Ratnam Sooriyakumaran

Robert David Allen

Phillip Joe Brock

Katherina E Babich

Karen Elizabeth Petrillo

Dario Leonardo Goldfarb

Gregory Breyta

Sean David Burns

Gregory Michael Wallraff

Richard Anthony DiPietro

Ranee W Kwong

Arpan Pravin Mahorowala

Daniel Sanders

David Brian Mitzi

John Patrick Simons

Bruce Bennett Doris

Alfred Grill

Vishnubhai Vitthalbhai Patel

Patrick William Dehaven

Libor Vyklicky

Robert Neal Lang

Qinghuang Lin

Ari Aviram

Hoa D Truong

Carl Eric Larson

C Richard Guarnieri

Douglas Charles LaTulipe

Debra Fenzel-Alexander

Devendra K Sadana

Son Van Nguyen

Stephen McConnell Gates

Elbert Emin Huang

Thomas W Dyer

Pushkara Rao Varanasi

Anna Wanda Topol

Xinhui Wang

Mahmoud M Khojasteh

Kenneth John McCullough

Charles Jesse Taft

Colin J Brodsky

Steven A Scheer

Wenjie Li

William R Brunsvold

Herman Russell Wendt

Michael James Lercel

Margaret C Lawson

Ranee Wai-Ling Kwong

Christopher Karl Magg

Karen Temple

Timothy M Hughes

Ali Afzali-Ardakani

Robert Dennis Miller

Hendrik F Hamann

Robert J Von Gutfeld

Christos Dimitrios Dimitrakopoulos

Deborah A Neumayer

Joy Cheng

Praveen Chaudhari

Linda Karin Sundberg

James Andrew Lacey

Frances Anne Houle

Teresita Ordonez Graham

John Allen Hoffnagle

Mark S Chace

Patrick W Dehaven

Ali Afzali Ardakani

Robert Allen David

Dirk Pfeifer

Libor Vylicky

Libor Vycklicky

Matt Pinnow

Deborah Newmayer

Bill Hinsberg

Dai Junyan

John E Darney

Alfred O Passano, Jr

An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.

Organic graded spin on BARC compositions for high NA lithography

The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.

Low temperature melt-processing of organic-inorganic hybrid

An antireflective hardmask composition layer including a polymer having Si&#x2014;O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.

Antireflective hardmask composition and a method of preparing a patterned material using same

A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. The process may also include optionally coating a top coat material on the coated substrate. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer wherein the optional top coat material and a portion of the photoresist layer are simultaneously removed from the coated substrate, thereby forming a patterned photoresist layer on the substrate. Alternatively, the optional top coat material, a portion of the photoresist layer and a portion of the bottom antireflective layers are simultaneously removed from the coated substrate by the developer, thereby forming a patterned photoresist layer on the substrate.

Self-segregating multilayer imaging stack with built-in antireflective properties

Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.

Use of mixed bases to enhance patterned resist profiles on chrome or sensitive substrates

Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals 'R' and 'Y' represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.

Bleachable materials for lithography

The present invention relates to complementary metal-oxide-semiconductor (CMOS) devices having gapped dual stressors with dielectric gap fillers. Specifically, each CMOS device of the present invention includes at least one n-channel field effect transistor (n-FET) and at least one p-channel field effect transistor (p-FET). A tensilely stressed dielectric layer overlays the n-FET, and a compressively stressed dielectric layer overlays the p-FET. A gap is located between the tensilely and compressively stressed dielectric layers and is filled with a dielectric filler material. In one specific embodiment of the present invention, both the tensilely and compressively stressed dielectric layers are covered by a layer of the dielectric filler material, which is essentially free of stress. In an alternatively embodiment of the present invention, the dielectric filler material is only present in the gap between the tensilely and compressively stressed dielectric layers.

High performance CMOS devices comprising gapped dual stressors with dielectric gap fillers, and methods of fabricating the same

Graded spin-on organic antireflective coating for photolithography

A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces. More specifically, the invention comprises a method for counterdoping of n-FET and/or p-FET regions of silicon circuitry during the halo and/or extension implantation process utilizing a technique by which the surface characteristics of the two regions are made similar with respect to their response to wet or dry surface preparation and which renders the two previously dissimilar surfaces amenable to simultaneous epitaxial growth of raised source/drain structures; but not otherwise affecting the electrical performance of the resulting device.

Method for tuning epitaxial growth by interfacial doping and structure including same

Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.

Multilayered resist systems using tuned polymer films as underlayers and methods of fabrication thereof

Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.

Antireflective hardmask and uses thereof

A barrier layer for fabricating at least one of a device and a mask includes a polymeric photoacid generator formed between a substrate and a resist layer. The barrier layer may be used, for example, in forming a resist image, and forming a patterned material feature on a substrate.

Ultrathin polymeric photoacid generator layer and method of fabricating at least one of a device and a mask by using said layer

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Ossining, NY, United States of America

David Robert Medeiros