General Signal Corporation

David R Beaulieu

John H Bruning

John D Wallace

A mask or reticle for a single large microcircuit device is imaged in portions by an axially centered photolithographic reduction lens having a movable mask stage in addition to a movable wafer stage so that the portions of the complete device are imaged in juxtaposed registry on the wafer. This allows a single microcircuit device larger than the image field of the reduction lens to be imaged in a scanning mode or in a succession of steps forming images at the desired resolution range of 0.1-0.50 .mu.m.

Photolithographic reduction imaging of extended field

In the distance and tilt sensing apparatus disclosed herein, an image of a light source is projected by a lens obliquely onto a surface to be sensed. A ring reticle is interposed in the optical path between the light source and the lens at a distance from the lens substantially equal to its focal length. A second lens projects a remote image of the first object image onto a detector. The light projected from the second lens is split into two paths. An aperture reticle is interposed in one of the paths at a distance from the second lens substantially equal to its focal length, an image of the center of the ring reticle being formed on the aperture reticle. A position responsive optical detector aligned with the aperture reticle senses the position of the image of the center of the ring reticle relative to the center of the aperture and that position is indicative of the tilt of the surface around an axis essentially perpendicular to the axis of the incident light.

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Wilmington, MA, United States of America

David R Beaulieu