International Business Machines Corporation

David Peter Klaus

Cyprian Emeka Uzoh

Daniel C Edelstein

Cyril Cabral, Jr

Wu-Song S Huang

Lidija Sekaric

Patrick William Dehaven

Raman Gobichettipalayam Viswanathan

James J Bucchignano

Carol L Stanis

James Manley Pollard, Iii

Non-chemically amplified radiation sensitive resist compositions containing silicon are especially useful for lithographic applications, especially E-beam lithography. More particularly, radiation-sensitive resist compositions comprising a polymer having at least one silicon-containing moiety and at least one radiation-sensitive moiety cleavable upon radiation exposure to form aqueous base soluble moiety can be used to pattern sub-50 nm features with little or no blur.

High resolution silicon-containing resist

The negative resist compositions especially suitable for electron beam-based lithographic processes are obtained by using a polymeric component containing first silsesquioxane moieties functionalized with a first reactive group having a first crosslinking reactivity and a first dissolution rate in aqueous alkaline solutions, and second silsesquioxane moieties functionalized with a second reactive group having a second crosslinking reactivity and a second dissolution rate in aqueous alkaline solutions, said reactivities being different from one another and said dissolution rates being different from one another. These negative resists enable improved negative lithographic processes, especially in the context of mask-making and direct-write techniques using electron beam lithography. The negative resists are also useful more generally in methods of forming patterned material features and advantageously show reduced incidence of image collapse at smaller groundrules.

Method for using negative tone silicon-containing resist for e-beam lithography

An interconnect structure and barrier layer for electrical interconnections is described incorporating a layer of TaN in the hexagonal phase between a first material such as Cu and a second material such as Al, W, and PbSn. A multilayer of TaN in the hexagonal phase and Ta in the alpha phase is also described as a barrier layer. The invention overcomes the problem of Cu diffusion into materials desired to be isolated during temperature anneal at 500&deg; C.

Thin film metal barrier for electrical interconnections

Thin metal barrier for electrical interconnections

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Yorktown Heights, NY, United States of America

David Peter Klaus