Applied Materials, Inc.

David P Wanamaker

John P Parks

Robert B Majewski

Christopher F Lane

Shamouil Shamouilian

Michael Santiago Cox

Peter K Loewenhardt

Canfeng Lai

Thanh Ngoc Pham

Yen-Kun Victor Wang

Fong M Chang

Yeh-Jen Kao

Eugene Fukshansky

A toroidal plasma source ( ) within a substrate processing chamber ( ). The toroidal plasma source forms a poloidal plasma with theta symmetry. The poloidal plasma current is essentially parallel to a surface of the plasma generating structure, thus reducing sputtering erosion of the inner walls. The plasma current is similarly essentially parallel to a process surface ( ) of a substrate ( ) within the chamber. In a further embodiment, a shaped member ( ) between the substrate and the plasma source controls the plasma density in a selected fashion to enhance plasma processing uniformity.

Toroidal plasma source for plasma processing

The invention provides a deposition system and methods of depositing materials onto substrates. In one aspect, a modular processing chamber is provided which includes a chamber body defining a processing region. The chamber body includes a removable gas feedthrough, an electrical feedthrough, a gas distribution assembly mounted on a chamber lid and a microwave applicator for generating reactive gases remote from the processing region.

Apparatus and method for depositing low K dielectric materials

A method and apparatus is provided which secures the lid of a processing chamber in abutting engagement with the walls of the chamber to form an airtight processing environment and which provides for the release of pressure within the chamber in the event of a sudden change in pressure such as an over pressure excursion. The method and apparatus generally comprise a clamp member having a base portion for mounting the clamp to a first surface, a contact portion for contacting a second surface and maintaining a desired relationship between the first and second surfaces, and a deflecting portion which allows separation of the first and second surfaces to relieve pressure behind the first or second surface and return to the desired relationship between the first and second surfaces.

Pressure responsive clamp for a processing chamber

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San Jose, CA, United States of America

David P Wanamaker