International Business Machines Corporation

Globalfoundries Inc.

David Osmond Melville

Alan Edward Rosenbluth

Kehan Tian

Tadanobu Inoue

Masaharu Sakamoto

Saeed Reza Bagheri

Kafai Lai

Valentina Salapura

Hidemasa Muta

Jaione Tirapu Azpiroz

Dario Gil

Rajiv V Joshi

Jonathan Lenchner

Ying Liu

Joseph N Kozhaya

Brian Paul Gaucher

Fook-Luen Heng

Rama Nand Singh

Saibal Mukhopadhyay

Jonathan Lee

Marc Alan Szeto-Millstone

Andreas Waechter

Masahura Sakamoto

Amith Singhee

Ulrich Alfons Finkler

Ashok Pon Kumar Sree Prakash

Scott Marshall Mansfield

Maria Gabrani

David L DeMaris

Steven N Hirsch

Francisco Barahona

Laszlo Ladanyi

Daniele P Scarpazza

A method of presenting data over a Web service interface includes: establishing, by a first computer process, a persistent transmission control protocol (TCP) network connection between the first computer process and a second computer process; dynamically allocating, by the second computer process, memory in response to receipt of static data over the persistent TCP network connection from the first computer process; updating, by the second computer process, the memory in response to receipt of dynamic data received over the persistent TCP network connection from the first computer process; and enabling, by the second computer process, a Web server to access the updated data for presentation by the Web service interface. The static data identifies a given entity and the dynamic data includes metric data provided for the entity.

Unifying realtime and static data for presenting over a web service

A system and method are provided for shared machine learning. The method includes providing a model to a plurality of agents included in a machine learning system. The model specifies attributes and attribute value data types for an event in which the agents act. The method further includes receiving agent-provided inputs during an instance of the event. The agent-provided inputs include estimated attribute values that are consistent with the attribute value data types. The method also includes determining expertise weights for at least some agents in response to at least one ground-truth which is learned from the estimated attribute values. The method additionally includes determining an estimate value for one or more of the attributes using respective adaptive mixtures of the estimated attribute values.

Interactive learning

A method for interpreting interpersonal communication includes monitoring a first interaction between two or more individuals using a set of monitoring devices including a camera, a microphone, and the like. A culture and personality type of at least one individual is identified based on the monitored first interaction. First cultural/personality profile information specific to the identified culture and personality type is retrieved from a database of cultural/personality profile information. A second interaction between the two or more individuals is monitored using the set of monitoring devices. A first facial expression, gesture, vocal intonation, or indication of emotional state derived from biometric data of the at least one individual is identified based on the monitored second interaction. The identified first expression is interpreted using the first cultural/personality profile information. The interpretation of the identified first expression is communicated to a user.

System and method for interpreting interpersonal communication

A system and method for optimizing (designing) a mask pattern, in which SMO and OPC are collaboratively used to exert a sufficient collaborative effect or are appropriately used in different manners. The method for designing a source and a mask for lithography includes a step (S) of selecting a set of patterns; a step of performing source mask optimization (SMO) using the set of patterns, under an optical proximity correction (OPC) restriction rule which is used for selectively restricting shifting of an edge position of a polygon when OPC is applied to the set of patterns; and a step (S, S) of determining a layout of the mask for lithography, by applying OPC to all patterns constituting the mask for lithography using the source optimized through the SMO.

Method and program product for designing source and mask for lithography

Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output.

Source, target and mask optimization by incorporating contour based assessments and integration over process variations

In one embodiment, a source mask optimization (SMO) method is provided that includes controlling bright region efficiency during at least one optical domain step. The bright region efficiency being the proportion of the total transmitted light that is transferred to bright areas of a target pattern. The optical domain intermediate solution provided by the at least one optical domain step may then be binarized to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor). The MEEF is controlled during at least one spatial domain step that optimizes the initial spatial domain solution.

Synthesizing low mask error enhancement factor lithography solutions

Source, target and mask optimization by incorporating countour based assessments and integration over process variations

A method, an article of manufacture, and a system for designing a mask. The method for designing a mask is implemented by a computer device having a memory, a processor device communicatively coupled to the memory, and a module configured to carry out the method including the steps of: generating an optical domain representation from a design pattern and an imaging light; and optimizing the optical domain representation under a constraint that values of negative excursions at predetermined evaluation points must be greater than or equal to predetermined negative threshold values assigned to the predetermined evaluation points; where: the optical domain representation is a variable representation of a wavefront; the imaging light is light that is transmitted through the mask; the negative excursions are in an object domain representation of the optical domain representation; and the predetermined evaluation points are in the object domain representation.

Mask design method, program, and mask design system

Systems and methods for optimizing a source shape and a mask shape for a lithography process are disclosed. One such method includes performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints. Further, a light source optimization for the lithography process is performed in accordance with the set of parameters. In addition, a joint light source-mask optimization is performed in accordance with the set of parameters. The method further includes iterating at least one of the mask optimization or the light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process.

Source-mask optimization for a lithography process

Techniques are presented that include accessing results of forward simulations of circuit yield, the results including at least circuit yield results including simulated device shapes. Using the circuit yield results, high-level traits of at least the simulated device shapes are determined. Based on the determined high-level traits and using the circuit yield results, a compact model for predicted yield is constructed, the compact model including a plurality of adjustable parameters, and the constructing the compact model for predicted yield including adjusting the adjustable parameters until at least one first predetermined criterion is met. An optimization problem is constructed including at least the compact model for yield, an objective, and a plurality of constraints. Using the optimization problem, the objective is modified subject to the plurality of constraints until at least one second predetermined criterion is met.

Analyzing a patterning process using a model of yield

Mask layout data of a lithographic mask includes polygons that each include horizontal and vertical edges. Each of a number of target edge pairs is defined by two edges of one or more of the polygons. A search box having a boundary coincident with a given edge of the edges of the polygons is specified. Whether the search box includes at least one edge of the edges of the polygons in addition to the given edge is determined. Where the search box includes at least one edge, at least one of the target edge pairs is specified as including the given edge and one of the at least one edge. For each target edge pair that has been specified, a manufacturability penalty value is determined. A dynamic manufacturability constraint table and a non-zero multiplier table are maintained.

Optimizing lithographic mask for manufacturability in efficient manner

The manufacturability of a lithographic mask employed in fabricating instances of a semiconductor device is determined. Target edge pairs are selected from mask layout data of the mask, for determining a manufacturing penalty in making the mask. The manufacturability of the mask, including the manufacturing penalty in making the mask, is determined based on the target edge pairs as selected, and is dependent on the manufacturing penalty in making the mask. Determining the manufacturability of the mask includes, for a selected edge pair having first and second edges that are at least substantially parallel to one another, determining a manufacturing shape penalty owing to an aspect ratio of the first edge relative to a size of a gap between the first edge and the second edge. This penalty takes into account a pair of connected edges of the first edge that are at least substantially parallel to the first edge.

Determining manufacturability of lithographic mask based on manufacturing shape penalty of aspect ratio of edge that takes into account pair of connected edges of the edge

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New York, NY, United States of America

David Osmond Melville