National Research Council of Canada

David John Lockwood

Danial D M Wayner

Rabah Boukherroub

Nobuyoshi Koshida

Lynden Erickson

Sylvie Morin

Patrik Schmuki

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structures are found to have unprecedented stability.

Passivation of porous semiconductors

A porous silicon structure is stabilized by anodically oxidizing the structure and then subjecting it to chemical functionalization to protect non-oxidized surface regions, preferably in the presence of 1-decene under thermal conditions. This process creates a protective organic monolayer on the surface of the structure, rendering it highly stable.

Luminescence stabilization of anodically oxidized porous silicon layers

A method is disclosed for stabilizing porous silicon. A porous silicon structure having a surface terminated with hydrogen atoms is subjected to organic thermal processing to substitute the hydrogen atoms with a protective organic layer. The resulting structure are found to have unprecedented stability.

A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs, and then an electrochemical etch is carried out on the semicnoductor at a potential at least equal to the reduced threshold potential for the selected regions and less than the threshold potential for untreated regions. The selective treatment preferably involves implantation with the same ions as the semiconductor, i.e. Si ions for silicon. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions.

Selective electrochemical process for creating semiconductor nano- and micro-patterns

A porous semiconductor is created by electrochemical etching. Selected regions of a semiconductor are first treated to reduce the threshold potential at which pore formation occurs, and then an electrochemical etch is carried out on the semiconductor at a potential at least equal to the reduced threshold potential for the selected regions and less than the threshold potential for untreated regions. The selective treatment preferably involves implantation with the same ions as the semiconductor, i.e. Si ions for silicon. The treatment results in the formation of highly defined etch patterns or patterns of porous material depending on the process conditions.

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Vanier, Canada

David John Lockwood