Applied Materials, Inc.

David H Mai

Fred Conrad Redeker

Shijian Li

Jui-lung Li

Shi-Ping Wang

Gary Lam

Jimin Zhang

Wen-Chiang Tu

Zhihong Wang

Stephen Jew

Boguslaw A Swedek

Rajeev Bajaj

Alain Duboust

Yongqi Hu

Ingemar Carlsson

Kapila P Wijekoon

Shih-Haur Shen

Tony Kaushal

Huyen Karen Tran

Rahul Surana

Yongsik Moon

Thomas H Osterheld

Kun Xu

Tomohiko Kitajima

Gary Ka Ho Lam

Shih-Haur Walters Shen

A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

Endpoint control of multiple substrate zones of varying thickness in chemical mechanical polishing

Methods for chemical mechanical polishing (CMP) of semiconductor substrates, and more particularly to temperature control during such chemical mechanical polishing are provided. In one aspect, the method comprises polishing the substrate with a polishing surface during a polishing process to remove a portion of the conductive material, repeatedly monitoring a temperature of the polishing surface during the polishing process, and exposing the polishing surface to a rate quench process in response to the monitored temperature so as to achieve a target value for the monitored temperature during the polishing process.

Temperature control of chemical mechanical polishing

Endpoint control of multiple substrates of varying thickness on the same platen in chemical mechanical polishing

Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

Method of chemical mechanical polishing with high throughput and low dishing

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Method and apparatus for polishing metal and dielectric substrates

Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects

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Palo Alto, CA, United States of America

David H Mai