Raytheon Company

David H Hinzel

Lloyd Frederick Linder

Charles L Goldsmith

A method of integrating MEMS devices with non-MEMS circuitry requires fabricating non-MEMS devices on a substrate in a conventional fashion. A thick dielectric layer is deposited on the completed devices, and the MEMS devices fabricated on the dielectric layer. Vias through the dielectric layer interconnect the MEMS devices to the non-MEMS electronics. The interposed dielectric layer allows the common substrate to have characteristics that best suit the non-MEMS components, without degrading the MEMS performance. Another approach involves bonding together two separate wafers&mdash;one for the MEMS devices and one for non-MEMS electronics. A package lid, having filled vias formed therethrough, is bonded to the MEMS wafer, sealing the MEMS devices within. The non-MEMS wafer is mounted to the lid, with the vias effecting the necessary interconnections between the two wafers. This enables the MEMS devices and the non-MEMS electronics to function as a single IC, while retaining the established processes associated with each component type.

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Fairfax Station, VA, United States of America

David H Hinzel