Kla Tencor Corporation

Kla-tencor Technologies Corporation

David Goodstein

David Lewis Adler

Luca Grella

Gian Francesco Lorusso

Chris Bevis

Laurence S Hordon

Paola De Cecco

Jason C Yee

Weidong Liu

One embodiment disclosed relates to a method for accurate electron beam metrology. A substrate with a target feature is loaded into a scanning electron microscope. An electron beam is scanned over the target feature, and scattered electrons are detected therefrom. A characteristic of the target feature is measured by finding optimal values for parameters of a mathematical model which accounts for substrate charging effects. Principal component analysis may be used to advantageously result in reduced requirements for processing time and/or computational speed.

Method and apparatus for accurate e-beam metrology

A scanning electron microscope (SEM) is calibrated for the effects of local charging on a measured critical dimension (CD) of a wafer by first calibrating the microscope with respect to a calibration wafer with a known CD. Local charging on a wafer may be measured as a local landing energy (LLE) so that a scale factor based on a ratio of LLEs for the measurement wafer and a calibration wafer is used to correct a measured CD for the measurement wafer.

Calibration of a scanning electron microscope

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San Francisco, CA, United States of America

David Goodstein