Asml Netherlands B.v.

Asml Holding N.v.

David Ferdinand Vles

Pieter-Jan Van Zwol

Mária Péter

Maxim Aleksandrovich Nasalevich

Arnoud Willem Notenboom

Willem-Pieter Voorthuijzen

Willem Joan Van Der Zande

Paul Janssen

Johannes Petrus Martinus Bernardus Vermeulen

Marcus Adrianus Van De Kerkhof

Adrianus Johannes Maria Giesbers

Derk Servatius Gertruda Brouns

Evgenia Kurganova

Erik Achilles Abegg

Johan Hendrik Klootwijk

Aleksandar Nikolov Zdravkov

Andrey Alexandrovich Nikipelov

Antonius Franciscus Johannes De Groot

James Norman Wiley

Pradeep Kumar Govil

Wilhelmus Theodorus Anthonius Johannes Van Den Einden

Aage Bendiksen

Ties Wouter Van Der Woord

Egbert Lenderink

Matthias Kruizinga

Hrishikesh Patel

Gerrit Van Den Bosch

Gijsbert Rispens

Nadja Schuh

Michiel Alexander Blauw

Nirupam Banerjee

Chaitanya Krishna Ande

Peter Simon Antonius Knapen

Antonius Willem Verburg

Hendrikus Jan Wondergem

Johannes Joseph Janssen

Nicolae Maxim

Claudia Piliego

Marcel Peter Meijer

Wouter Rogier Meijerink

Raymond Olsman

Leonid Aizikovitsj Sjmaenok

Johannes Onvlee

Wim Symens

Christiaan Alexander Hoogendam

Vadim Yevgenyevich Banine

Martinus Hendrikus Antonius Leenders

Raymond Wilhelmus Louis Lafarre

Frits Van Der Meulen

Harmen Klaas Van Der Schoot

Sebastianus Adrianus Goorden

Simon Reinald Huisman

Adrianus Hendrik Koevoets

Gosse Charles De Vries

Sander Catharina Reinier Derks

Jim Vincent Overkamp

Irwan Dani Setija

Martinus Agnes Willem Cuijpers

Dennis De Graaf

Koos Van Berkel

Beatrijs Louise Marie-Joseph Katrien Verbrugge

Stefan Michiel Witte

Christiaan Louis Valentin

Tamara Druzhinina

Hendrikus Herman Marie Cox

Jacobus Cornelis Gerardus Van Der Sanden

Johan Franciscus Maria Beckers

Stan Henricus Van Der Meulen

Alain Louis Claude Leroux

Jeroen Van Duivenbode

Mohammad Reza Kamali

Alexander Ludwig Klein

Joost André Klugkist

Roland Johannes Wilhelmus Stas

Wilhelmus Jacobus Johannes Welters

Michael Alfred Josephus Kuijken

Erik Johan Arlemark

Ronald Cornelis Gerardus Gijzen

Patrick Willem Paul Limpens

Dries Vaast Paul Hemschoote

Eric Willem Felix Casimiri

Zomer Silvester Houweling

Sicco Oosterhoff

Joost De Hoogh

Alessandro Antoncecchi

Hao Zhang

Stephen Edward

Paulus Clemens Maria Planken

Sandro Wricke

Paul Comé Henri De Wit

Evert Auke Rinze Westerhuis

Anton Wilhelmus Duys

Sten Vollebregt

Fabio Sbrizzai

Dmitry Kurilovich

Madhusudhanan Jambunathan

Eric Willem Casimiri

Beatrijs Louise Verbrugge

Michael Alfred Kuijken

Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Membrane for EUV lithography

Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Method of manufacturing a pellicle for a lithographic apparatus, a pellicle for a lithographic apparatus, a lithographic apparatus, a device manufacturing method, an apparatus for processing a pellicle, and a method for processing a pellicle

A pellicle assembly includes a pellicle frame defining a surface onto which a pellicle is, or to be, attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. A pellicle assembly for a patterning device, the pellicle assembly includes one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Pellicle and pellicle assembly

A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

A substrate support for supporting a substrate. The substrate support includes a main body, a clamping device and a dither device. The main body includes a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate is being loaded onto the support surface.

Substrate support, lithographic apparatus and loading method

A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Metal-silicide-nitridation for stress reduction

A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Simultaneous double-side coating of multilayer graphene pellicle by local thermal processing

The invention relates to a pellicle assembly comprising a pellicle frame defining a surface onto which a pellicle is attached. The pellicle assembly comprises one or more three-dimensional expansion structures that allow the pellicle to expand under stress. The invention also relates to a pellicle assembly for a patterning device comprising one or more actuators for moving the pellicle assembly towards and way from the patterning device.

A membrane cleaning apparatus for removing particles from a membrane, the apparatus including a membrane support and an electric field generating mechanism. The membrane support is for supporting the membrane. The electric field generating mechanism is for generating an electric field in the vicinity of the membrane when supported by the membrane support. The electric field generating mechanism may include: one or more collector electrodes; and a mechanism for applying a voltage across a membrane supported by the membrane support and the or each of the one or more collector electrodes.

Membrane cleaning apparatus

A substrate support for supporting a substrate. The substrate support comprises a main body, a clamping device and a dither device. The main body comprises a support surface for supporting the substrate. The clamping device is arranged to provide the clamping force to clamp the substrate on the support surface. The dither device is configured to dither the clamping force. The dither device may be configured to dither the clamping force while the substrate W is being loaded onto the support surface.

A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.

Graphene pellicle lithographic apparatus

A membrane for EUV lithography, the membrane having a thickness of no more than 200 nm and including a stack having: at least one silicon layer; and at least one silicon compound layer made of a compound of silicon and an element selected from the group consisting of boron, phosphorous, bromine.

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Eindhoven, Netherlands

David Ferdinand Vles