Applied Materials, Inc.

David Fenwick

Jennifer Y Sun

Xiaowei Wu

Guodong Zhan

Prerna Sonthalia Goradia

Geetika Bajaj

Rajkumar Thanu

Jeff Hudgens

Gayatri Natu

Darshan Thakare

Karuppasamy Muthukamatchy

Arun Dhayalan

XiaoMing He

Sanni Seppaelae

Michael Robert Rice

Yikai Chen

Chengtsin Lee

Xiao Ming He

Cheng-Hsuan Chou

Jennifer Sun

Embodiments of the present disclosure relate to articles, coated articles, and methods of coating such articles with a corrosion resistant coating. The corrosion resistant coating can comprise hafnium aluminum oxide. The corrosion resistant coating may be deposited by a non-line of sight deposition, such as atomic layer deposition. Articles that may be coated may include chamber components, such as gas lines.

Hafnium aluminum oxide coatings deposited by atomic layer deposition

A method comprises depositing a first layer of aluminum oxide onto a surface of a chamber component via atomic layer deposition (ALD). The method further comprises depositing a second layer of yttrium oxide onto a surface of the chamber component via ALD, depositing a third layer of zirconium oxide onto the surface of the chamber component via ALD, and forming a corrosion and erosion resistant coating comprising a YZrOsolid state phase of the second layer and the third layer, wherein x and y have values that are based on a number of repetitions of the atomic layer deposition process that are used to deposit the second layer and a number of repetitions of the atomic layer deposition process that are used to deposit the third layer.

Atomic layer deposition of protective coatings for semiconductor process chamber components

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of an article using an atomic layer deposition (ALD) process. The plasma resistant coating has a first layer and a second layer including a solid solution of YO—ZrOand uniformly covers features, such as those having an aspect ratio of length to width of about 3:1 to about 300:1.

Multi-layer plasma resistant coating by atomic layer deposition

Disclosed in some embodiments is a chamber component (such as an end effector body) coated with an ultrathin electrically-dissipative material to provide a dissipative path from the coating to the ground. The coating may be deposited via a chemical precursor deposition to provide a uniform, conformal, and porosity free coating in a cost effective manner. In an embodiment wherein the chamber component comprises an end effector body, the end effector body may further comprise replaceable contact pads for supporting a substrate and the contact surface of the contact pads head may also be coated with an electrically-dissipative material.

Ultrathin conformal coatings for electrostatic dissipation in semiconductor process tools

A method of manufacturing a chamber component for a processing chamber comprises forming a green body using a YO&#x2014;ZrOpowder consisting essentially of 55-65 mol % YOand 35-45 mol % ZrO; and sintering the green body to produce a sintered ceramic body consisting essentially of one or more phase of YO&#x2014;ZrO, the sintered ceramic body consisting essentially of 55-65 mol % YOand 35-45 mol % ZrO.

YO&#x2014;ZrOerosion resistant material for chamber components in plasma environments

An article comprises a body having a protective coating. The protective coating is a thin film that comprises a metal oxy-fluoride. The metal oxy-fluoride has an empirical formula of MOF, where M is a metal, y has a value of 0.1 to 1.9 times a value of x and z has a value of 0.1 to 3.9 times the value of x. The protective coating has a thickness of 1 to 30 microns and a porosity of less than 0.1%.

Protective metal oxy-fluoride coatings

A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOF, YAlO, YZrOand YZrAlO.

Described herein are articles, systems and methods where a plasma resistant coating is deposited onto a surface of a chamber component using an atomic layer deposition (ALD) process. The plasma resistant coating has a stress relief layer and a layer comprising a solid solution of YO&#x2014;ZrOand uniformly covers features, such as those having an aspect ratio of about 3:1 to about 300:1.

A multi-component coating composition for a surface of a chamber component comprising at least one first film layer of a yttrium oxide coated onto the surface of the chamber component using an atomic layer deposition process and at least one second film layer of zirconium oxide coated onto the surface of the chamber component using an atomic layer deposition process, wherein the multi-component coating comprises YZrO.

A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first film layer of a yttrium oxide or a yttrium fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process and at least one second film layer of an additional oxide or an additional fluoride coated onto the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from the group consisting of YOF, YAlO, YZrO and YZrAlO.

A chamber component for a processing chamber comprises a ceramic body consisting of a sintered ceramic material consisting essentially of one or more phase of YO&#x2014;ZrO. The ceramic material consists essentially of 55-65 mol % YOand 35-45 mol % ZrO.

A multi-layer coating for a surface of an article comprises a diffusion barrier layer and an erosion resistant layer. The diffusion barrier layer may be a nitride film including but not limited to TiN, TaN, ZrN, and TiZrN. The erosion resistant layer may be a rare oxide film comprising YZrO. The diffusion barrier layer and the erosion resistant layer may be deposited on the article's surface using a thin film deposition technique including but not limited to, ALD, PVD, and CVD.

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Los Altos Hills, CA, United States of America

David Fenwick