Delco Electronics Corporation

Gm Global Technolgoy Operations, Inc.

David E Moss

Douglas J Yoder

Diane W Sidner

Randy A Rusch

Karl Edward Stone

Charles A Bright, Jr

A moat having a flat bottom and tapered side walls is formed in a monocrystalline silicon body (substrate) and extends from a top surface of the substrate into the substrate. An oxide layer is grown over side walls and a bottom of the moat and then is selectively removed from the bottom of the moat to expose silicon. An epitaxial stalk (a recessed mesa) is grown on the silicon at the bottom of the moat to a height which makes its top at least coplanar with the top surface of the substrate.

Method of forming semiconductor stalk structure by epitaxial growth in

A pressure sensor uses a monocrystalline silicon chip that has a diaphragm portion in which strain gages are formed that overlie a buried cavity. The cavity is formed by a single sided semiconductor fabrication process that includes a pair of preferential etching steps and an epitaxial deposition step.

Method of making a semiconductive structure useful as a pressure sensor

Semiconductive stalk structure

Semiconductive structure useful as a pressure sensor

A method of making a strain gauge in a fragile web wherein the improvement resides in making the web after the gauge is substantially completely formed. This reverse sequence is made possible by a unique combination of plasma deposited silicon oxide and plasma deposited silicon nitride on top of the completed device to protect it from attack during silicon substrate etching to form the diaphragm.

Method of making strain sensor in fragile web

Growing community of inventors

Kokomo, IN, United States of America

David E Moss