Yieldup International

Cypress Semiconductor Corporation

David C Wong

Suraj Puri

Raj Mohindra

Rajiv Bhushan

Krishnaswamy Ramkumar

Hanna Bamnolker

Abhay K Bhushan

Kaichiu Wong

Gary Elmore

A method is described for cleaning a semiconductor wafer. The method includes immersing a wafer in a liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance also is included. It is believed that the cleaning enhancement substance dopes any liquid adhered to the front and back faces of the wafer to cause a concentration gradient of the cleaning enhancement substance in the liquid and accelerate removal of the adhered liquid off of the water.

Ultra-low particle semiconductor cleaner for removal of particle

A cleaning system (1, 5) having multiple cleaning chambers (200) is provided. Each cleaning chamber (200) includes an interior region sufficient for immersing a carrier (242), which has at least one wafer disposed therein, into an ultra-clean liquid. The cleaning chamber (200) also has an inlet operably coupled to the interior region to introduce a gas into the interior region and a drain operably coupled to the interior region to remove the ultra-clean liquid from the interior region at a selected rate. A controller 14 is operably coupled to the chamber (200) for selectively controlling the selected rate. In an alternative embodiment, an installation technique (80) for the above cleaning system (1,5) is provided.

Method and apparatus for cleaning wafers using multiple tanks

A method (400) for cleaning a semiconductor wafer. The method includes immersing (420) a wafer in a hot or heated liquid comprising water. The wafer has a front face, a back face, and an edge. The method also includes providing a substantially particle free environment adjacent to the front face and the back face as the liquid is being removed. A step of introducing a carrier gas comprising a cleaning enhancement substance during the providing step (450) also is included. The cleaning enhancement substance dopes the liquid which is attached to the front face and the back face to cause a concentration gradient of the cleaning enhancement substance in the attached liquid to accelerate fluid flow of the attached liquid off of the wafer.

Ultra-low particle semiconductor cleaner using heated fluids

A cleaning system (1, 5) having multiple cleaning chambers (200) is provided. Each cleaning chamber (200) includes an interior region sufficient for immersing a carrier (242), which has at least one wafer disposed therein, into an ultra-clean liquid. The cleaning chamber (200) also has an inlet operably coupled to the interior region to introduce a gas into the interior region and a drain operably coupled to the interior region to remove the ultra-clean liquid from the interior region at a selected rate. A controller 14 is operably coupled to the chamber (200) for selectively controlling the selected rate. In an alternative embodiment, an installation technique (80) for the above cleaning system (1, 5) is provided.

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San Jose, CA, United States of America

David C Wong