Axcelis Technologies, Inc.

David Bernhardt

William Davis Lee

Marvin Farley

William F DiVergilio

Kan Ota

Donald N Polner

Jerry Negrotti

Kevin R Verrier

Michael Chen

A semiconductor manufacturing system or process, such as an ion implantation system, apparatus and method, including a component or step for heating a semiconductor workpiece are provided. An optical heat source emits light energy to heat the workpiece. The optical heat source is configured to provide minimal or reduced emission of non-visible wavelengths of light energy and emit light energy at a wavelength in a maximum energy light absorption range of the workpiece.

Optical heat source with restricted wavelengths for process heating

The present invention involves a system and method of remotely detecting the presence of a wafer comprising, a passive RFID circuit, wherein the RFID circuit is attached to an end of a transfer arm located inside a vacuum chamber of an ion implantation system, a reader located outside the vacuum chamber, and wherein the RFID tag provides an indication relating to whether or not a wafer is secured by the transfer arm.

Remote wafer presence detection with passive RFID

An improved HE LINAC-based ion implantation system is disclosed utilizing direct digital synthesis (DDS) techniques to obtain precise frequency and phase control and automated electrode voltage phase calibration. The DDS controller may be used on a multi-stage linear accelerator based implanter to digitally synchronize the frequency and phase of the electric fields to each electrode within each stage of the accelerator. The DDS controller includes digital phase synthesis (DPS) circuits for modulating the phase of the electric field to the electrodes, and a master oscillator that uses digital frequency synthesis or DFS to digitally synthesize a master frequency and phase applied to each of the DPS circuits. Also disclosed are methods for automatically phase and amplitude calibrating the RF electrode voltages of the stages.

Application of digital frequency and phase synthesis for control of electrode voltage phase in a high-energy ion implantation machine, and a means for accurate calibration of electrode voltage phase

Method and apparatus for use in setting up workpiece treatment or processing equipment. A disclosed system processes silicon wafers that are treated during processing steps in producing semiconductor integrated circuits. The processing equipment includes a wafer support that supports a wafer in a treatment region during wafer processing. A housing provides a controlled environment within the housing interior for processing the wafer on the wafer support. A mechanical transfer system transports wafers to and from the support. A wafer simulator is used to simulate wafer movement and includes a pressure sensor for monitoring contact between the simulator and the wafer transfer and support equipment. In one illustrated embodiment the wafer simulator is generally circular and includes three equally spaced pressure sensors for monitoring contact with wafer transport and support equipment.

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Hudson, MA, United States of America

David Bernhardt