Tokyo Electron Limited

Dave Hetzer

Shannon W Dunn

Shinichiro Kawakami

A method for double patterning a substrate is described. The double patterning method may include a litho/freeze/litho/etch (LFLE) technique that includes a first (critical dimension) CD slimming process to reduce the first CD to a first reduced CD and a second CD slimming process to reduce the second CD to a second reduced CD.

Double patterning with inline critical dimension slimming

A method for patterning a substrate is described. The patterning method may include performing a lithographic process to produce a pattern and a critical dimension (CD) slimming process to reduce a CD in the pattern to a reduced CD. Thereafter, the pattern is doubled to produce a double pattern using a sidewall image transfer technique.

Sidewall image transfer pitch doubling and inline critical dimension slimming

A method for patterning a substrate is described. The method includes forming a layer of radiation-sensitive material on a substrate, and preparing a pattern in the layer of radiation-sensitive material using a lithographic process, wherein the pattern is characterized by a critical dimension (CD) and a roughness. Following the preparation of the pattern in the layer of radiation-sensitive material, the method further includes performing a CD slimming process to reduce the CD to a reduced CD, and performing a vapor smoothing process to reduce the roughness to a reduced roughness.

Vapor treatment process for pattern smoothing and inline critical dimension slimming

A method for patterning a substrate is described. The method comprises forming a layer of radiation-sensitive material on the substrate, preparing a pattern in the layer of radiation-sensitive material, and applying a chemical freeze layer over the layer of radiation-sensitive material to form a frozen layer of radiation-sensitive material. Thereafter, the method comprises stripping the chemical freeze layer using a high normality strip solution to preserve the pattern in the frozen layer of radiation-sensitive material, wherein the high normality strip solution contains an active solute having a normality (N) greater than 0.26.

Growing community of inventors

Schenectady, NY, United States of America

Dave Hetzer