Asm America, Inc.

Tokyo Electron Limited

Darko Babic

Eric James Shero

Carl Louis White

Mohith E Verghese

Herbert Terhorst

Kyle Fondurulia

Marko Peussa

Min Yan

An atomic deposition (ALD) thin film deposition apparatus includes a deposition chamber configured to deposit a thin film on a wafer mounted within a space defined therein. The deposition chamber comprises a gas inlet that is in communication with the space. A gas system is configured to deliver gas to the gas inlet of the deposition chamber. At least a portion of the gas system is positioned above the deposition chamber. The gas system includes a mixer configured to mix a plurality of gas streams. A transfer member is in fluid communication with the mixer and the gas inlet. The transfer member comprising a pair of horizontally divergent walls configured to spread the gas in a horizontal direction before entering the gas inlet.

Reaction system for growing a thin film

A method and system for controlling a velocity field in a processing system is described. In an exemplary embodiment described, the system includes a multi-outlet exhaust manifold having three or more outlets coupled to the processing system adjacent a surface of a substrate to be process. The three or more outlets are located adjacent the substrate in order to provide for a uniform flow of fluid above the surface of the substrate. Additionally, the flow of fluid through the three or more outlets is cyclically and sequentially alternated.

Method and system for controlling a velocity field of a supercritical fluid in a processing system

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Chandler, AZ, United States of America

Darko Babic