Applied Materials, Inc.

Daping Yao

Mei Yin Chang

Paul F Ma

Jiang Lu

Can Xu

Dien-Yeh Wu

Xiaoxiong Yuan

Kenric T Choi

Hyman W H Lam

Juan Carlos Rocha-Alvarez

John C Forster

Sanjeev Baluja

Xianmin Tang

Feng Quan Liu

Kelvin Chan

Alexandros T Demos

Thomas E Nowak

Adolph Miller Allen

Joung Joo Lee

Peter I Porshnev

Xiangjin Xie

Bo Xie

Scott A Hendrickson

Abhijit Ashok Kangude

Alexander Jansen

Daemian Raj

Mahendra Chhabra

Inna Turevsky

Martin A Hilkene

Matthew D Scotney-Castle

Manoj Vellaikal

Ampoules for a semiconductor manufacturing precursors and methods of use are described. The ampoules include a container with an inlet port and an outlet port. The inlet port has a showerhead that the end within the container. The showerhead has at least two angled nozzles to direct the flow of gas within the cavity so that the gas flow is not perpendicular to the surface of a liquid within the ampoule.

Apparatus for increasing flux from an ampoule

Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

Apparatus for depositing metal films with plasma treatment

Apparatus and methods for supplying a gas to a processing chamber are described. The apparatus comprises an inlet line and an outlet line, each with two valves, in fluid communication an ampoule. A bypass line connects the inlet valve and outlet valve closest to the ampoule. The apparatus and methods of use allow a precursor residue to be removed from the delivery lines of a processing chamber.

Apparatus and methods to remove residual precursor inside gas lines post-deposition

A gas feedthrough assembly and processing apparatus using the same are disclosed herein. In some embodiments, the gas feedthrough assembly, includes a dielectric body; at least one channel extending through the dielectric body; and a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel.

Gas feedthrough assembly

In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.

Methods to fill high aspect ratio features on semiconductor substrates with MOCVD cobalt film

Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt. % of an alcohol to reduce a contaminated surface of the conductive material.

Methods for pre-cleaning conductive materials on a substrate

A cleaning method for a UV chamber involves providing a first cleaning gas, a second cleaning gas, and a purge gas to one or more openings in the chamber. The first cleaning gas may be an oxygen containing gas, such as ozone, to remove carbon residues. The second cleaning gas may be a remote plasma of NFand Oto remove silicon residues. The UV chamber may have two UV transparent showerheads, which together with a UV window in the chamber lid, define a gas volume proximate the UV window and a distribution volume below the gas volume. A purge gas may be flowed through the gas volume while one or more of the cleaning gases is flowed into the distribution volume to prevent the cleaning gases from impinging on the UV transparent window.

Method and hardware for cleaning UV chambers

Methods for repairing low-k dielectrics using a plasma immersion carbon doping process are provided herein. In some embodiments, a method of repairing a low-k dielectric material disposed on a substrate having one or more features disposed through the low-k dielectric material may include depositing a conformal oxide layer on the low-k dielectric material and within the one or more features; and doping the conformal oxide layer with carbon using a plasma doping process.

Methods for repairing low-k dielectrics using carbon plasma immersion

Methods for processing a substrate are provided herein. In some embodiments, method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of up to about 400 degrees Celsius, wherein the substrate comprises a first surface, an opposing second surface, and an opening formed in the first surface and extending towards the opposing second surface, and wherein the second surface comprises a conductive material disposed in the second surface and aligned with the opening; and exposing the substrate to a process gas comprising about 80 to about 100 wt % of an alcohol to reduce a contaminated surface of the conductive material.

Methods for pre-cleaning conductive interconnect structures

A method of selective deposition on silicon substrates having regions of bare silicon and regions of oxide formed thereon. The method includes placing the substrate on a wafer support inside a processing chamber, introducing a carbon-containing gas into the reactor, applying a bias to the substrate, generating a plasma from the hydrocarbon gas, implanting carbon ions into the regions of oxide on the substrate by a plasma doping process, and depositing a carbon-containing film on the bare silicon regions.

Selective deposition of polymer films on bare silicon instead of oxide surface

Methods for quantitatively measuring the performance of a plasma immersion process are provided herein. In some embodiments, a method of quantitatively measuring the performance of a plasma immersion process, using a first substrate comprising an oxide layer deposited atop a silicon layer, may include subjecting the first substrate to a plasma immersion process in a first plasma immersion chamber to form a doped oxide layer atop the first substrate; and determining a thickness of the doped oxide layer by shining a beam of light upon a reflective surface of the doped oxide layer; detecting reflected beams of light off of the reflective surface of the doped oxide layer; and analyzing the reflected beams of light to determine the thickness of the doped oxide layer on the first substrate.

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Portland, OR, United States of America

Daping Yao