Micron Technology Incorporated

Micron Display Technology, Inc.

Danny Dynka

Charles Martin Watkins

David A Cathey

Larry Duane Kinsman

Ross S Dando

Craig M Carpenter

Garo Jacques Derderian

Shuang Meng

Durai Vishak Nirmal Ramaswamy

Joel A Drewes

James J Hofmann

Eric Blomiley

Darryl M Stansbury

The invention includes atomic layer deposition methods of depositing an oxide on a substrate. In one implementation, a substrate is positioned within a deposition chamber. A first species is chemisorbed onto the substrate to form a first species monolayer within the deposition chamber from a gaseous precursor. The chemisorbed first species is contacted with remote plasma oxygen derived at least in part from at least one of Oand Oand with remote plasma nitrogen effective to react with the first species to form a monolayer comprising an oxide of a component of the first species monolayer. The chemisorbing and the contacting with remote plasma oxygen and with remote plasma nitrogen are successively repeated effective to form porous oxide on the substrate. Other aspects and implementations are contemplated.

Atomic layer deposition method of depositing an oxide on a substrate

In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

Substrate susceptors for receiving semiconductor substrates to be deposited upon

Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces

Methods, apparatuses, and systems for controlling mass flow rates and pressures in passageways coupled to reaction chambers are disclosed herein. In one embodiment, a method includes controlling a mass flow rate in a passageway in response to a first condition by modulating a valve of a mass flow and pressure control unit, and controlling a pressure in the passageway in response to a second condition different than the first condition by modulating the valve of the mass flow and pressure control unit. In another embodiment, an apparatus includes a mass flow measurement device, a pressure sensor, a modulating valve in the passageway, and a controller operably coupled to the mass flow measurement device, the pressure sensor, and the modulating valve. The controller has a computer-readable medium containing instructions to perform the above-mentioned method.

Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers

Reactors having gas distributors for depositing materials onto micro-device workpieces, systems that include such reactors, and methods for depositing materials onto micro-device workpieces are disclosed herein. In one embodiment, a reactor for depositing materials onto a micro-device workpiece includes a reaction chamber, a passageway, and a door assembly. The reaction chamber includes a gas distributor configured to provide a flow of gas(es) to a micro-device workpiece on a workpiece holder. The passageway, which has a first end open to the reaction chamber and a second end apart from the reaction chamber, is configured to provide ingression to and egression from the chamber for processing the micro-device workpiece. The door assembly is configured to open and sealably close a door at the second end of the passageway. A gas conditioning system positioned in the door is configured to maintain a desired concentration and phase of gas constituents in the passageway.

A method of evacuating and sealing the space between the baseplate and the faceplate of a field emission display. A frit bead is formed around the perimeter of the baseplate, and is then heated to a temperature at which a plurality of surface irregularities are formed on the surface of the bead. After the faceplate is placed on top of the frit bead, the panels are placed in a vacuum, and the space between the plates is evacuated through gaps in the frit bead formed by the surface irregularities. After the space between the plates has been evacuated, the frit bead is heated to a temperature that is high enough to allow the frit to at least partially flow. A compressive force applied between the plates compresses the frit bead, thereby bonding the frit bead to the plates. The plates are then allowed to cool before removing the plates from the vacuum.

Method of evacuating and sealing flat panel displays and flat panel displays using same

Faceplates for field emission displays having novel cathodoluminescent layers are disclosed. In one embodiment, a faceplate includes a cathodoluninescent layer exposed to electrons (scrubbed) in a vacuum, the electron's having a current density of greater than one hundred microamperes per square centimeter. The cathodoluninescent layer may be reversibly darkened by the scrubbing. In one alternate aspect, the cathodoluninescent layers are irradiated with an electron beam having a duty cycle duty cycle of between ten and one hundred percent. In alternate aspects, an accelerating voltage may be maintained between the cathodoluminescent layer and a source of electrons, and the accelerating voltage may be dithered to treat the cathodoluminescent layer to varying depths. Significantly, the scrubbed faceplate has significantly enhanced performance and increased usefull life compared to faceplates that have not been scrubbed.

Low-voltage cathode for scrubbing cathodoluminescent layers for field emission displays and method

Field emission displays having novel cathodoluminescent layers are disclosed. In one embodiment, the cathodoluminescent layers are exposed to electron irradiation with an electron current having a duty cycle in excess of ten percent. In alternate aspects, the electron irradiation (scrubbing) may be performed in a vacuum, and an accelerating voltage may be maintained between the cathodoluminescent layer and an source of electrons. The cathodoluminescent layer may be reversibly darkened by the scrubbing. The cathodoluminescent layers may be formed on a transparent conductive layer formed on a transparent insulating viewing screen to provide a faceplate. In one aspect, the cathodoluminescent layers are irradiated with electrons having a density of greater than one hundred microamperes/cm . Significantly, this results in improved emitter life in a field emission display. The display including the scrubbed faceplate has significantly enhanced performance and increased useful life compared to displays including faceplates that have not been scrubbed.

Field emission displays having novel cathodoluminescent layers are disclosed. The cathodoluminescent layers are irradiated with electrons having a density of greater than one hundred microamperes/cm . Significantly, this results in improved emitter life in a field emission display. The display including the scrubbed faceplate has significantly enhanced performance and increased useful life compared to displays including faceplates that have not been scrubbed.

Display having scrubbed cathodoluminescent layer

Faceplates for field emission displays having novel cathodoluminescent layers are disclosed. In one embodiment, a faceplate includes a cathodoluminescent layer exposed to electron irradiation with an electron curt having a kinetic energy of less than one thousand electron volts, The electron irradiation (scrubbing) may be performed in a vacuum, and the cathodoluminescent layer may be reversibly darkened by the scrubbing. The cathodoluminescent layers may be formed on a transparent conductive layer formed on a transparent insulating viewing screen. In one aspect, the cathodoluminescent layers are irradiated with electrons having a density of greater than one hundred microamperes/cm . In alternate aspects, an accelerating voltage may be maintained between the cathodoluminescent layer and a source of electrons, and the accelerating voltage may be dithered to treat the cathodoluminescent layer to vary depths. Significantly, the scrubbed faceplate has significantly enhanced performance and increased useful life compared to faceplates that have not been scrubbed.

Faceplates having scrubbed cathodoluminescent layers for field emission displays

Faceplates for field mission displays having novel cathodoluminescent layers are disclosed. In one embodiment a faceplate includes a transparent conductive layer, and a cathodoluminescent layer formed on the transparent conductive layer, the cathodoluminescent layer having been scrubbed by electron irradiation from an electron source with an electron current having a duty cycle in excess of ten percent, the electron current having a current density of greater than one-tenth milliampere per square centimeter while a voltage less than a thousand volts is maintained between the cathodoluminescent layer and the electron source. In one aspect, the transparent conductive layer may be formed on a transparent insulating viewing screen. In alternate aspects, the voltage maintained between the cathodoluminescent layer and the electron source may be dithered to treat the cathodoluminescent layer to varying depths. Significantly, the scrubbed faceplate has significantly enhanced performance and increased useful life compared to faceplates that have not been scrubbed.

Faceplate for field emission display

The present invention includes a low voltage, high current density, large area cathode for scrubbing of cathodoluminescent layers. The cathodoluminescent layers are formed on a transparent conductive layer formed on a transparent insulating viewing screen to provide a faceplate. An electrical coupling is formed to the transparent conductive layer to provide a return path for electrons. The faceplate and the cathodoluminescent layers are placed on a conveyer in a vacuum. The cathodoluminescent layers are irradiated with an electron beam having a density of greater than one hundred microamperes/cm . The electron beam may be provided by a cathode including an insulating base, a first post secured to the insulating base near a first edge of the insulating base and a second post including a spring-loaded tip secured to the insulating base near a second edge of the insulating base. The cathode also includes a first wire cathode having a first end coupled to the first post and a second end coupled to the spring-loaded tip of the second post. The first wire cathode is maintained in a tensioned state by the spring-loaded tip. The electron irradiation scrubs oxygen-bearing species from the cathodoluminescent layer. Significantly, this results in improved emitter life when the faceplate is incorporated in a field emission display. The display including the scrubbed faceplate has significantly enhanced performance and increased useful life compared to displays including faceplates that have not been scrubbed.

The present invention includes a low voltage, high current density, large area cathode for scrubbing of cathodoluminescent layers. The cathodoluminescent layers are formed on a transparent conductive layer formed on a transparent insulating viewing screen to provide a faceplate. An electrical coupling is formed to the transparent conductive layer to provide a return path for electrons. The faceplate and the cathodoluminescent layers are placed on a conveyer in a vacuum. The cathodoluminescent layers are irradiated with an electron beam having a density of greater than one hundred microamperes/cm,. The electron beam may be provided by a cathode including an insulating base, a first post secured to the insulating base near a first edge of the insulating base and a second post including a spring-loaded tip secured to the insulating base near a second edge of the insulating base. The cathode also includes a first wire cathode having a first end coupled to the first post and a second end coupled to the spring-loaded tip of the second post. The first wire cathode is maintained in a tensioned state by the spring-loaded tip. The electron irradiation scrubs oxygen-bearing, species from the cathodoluminescent layer. Significantly, this results in improved emitter life when the faceplate is incorporated in a field emission display. The display including the scrubbed faceplate has significantly enhanced performance and increased useful life compared to displays including faceplates that have not been scrubbed.

The present invention includes a low voltage, high current density, large area cathode for scrubbing of cathodoluminescent layers. The cathodoluminescent layers are formed on a transparent conductive layer formed on a transparent insulating viewing screen to provide a faceplate. An electrical coupling is formed to the transparent conductive layer to provide a return path for electrons. The faceplate and the cathodoluminescent layers are placed on a conveyer in a vacuum. The cathodoluminescent layers are irradiated with an electron beam having a density of greater than one hundred microamperes/cm,. The electron beam may be provided by a cathode including an insulating base, a first post secured to the insulating base near a first edge of the insulating base and a second post including a spring-loaded tip secured to the insulating base near a second edge of the insulating base. The cathode also includes a first wire cathode having a first end coupled to the first post and a second end coupled to the spring-loaded tip of the second post. The first wire cathode is maintained in a tensioned state by the spring-loaded tip. The electron irradiation scrubs oxygen-bearing species from the cathodoluminescent layer. Significantly, this results in improved emitter life when the faceplate is incorporated in a field emission display. The display including the scrubbed faceplate has significantly enhanced performance and increased useful life compared to displays including faceplates that have not been scrubbed.

Growing community of inventors

Meridian, ID, United States of America

Danny Dynka