Axus Technology LLC

Speedfam-ipec Corporation

Other

Applied Materials, Inc.

Obsidian, Inc.

Axus Technologi, LLC

Daniel R Trojan

Clifford Daniel

Richard Ciszek

John Kevin Shugrue

Periya Gopalan

Lawrence L Lee

Jon R MacErnie

Anand Gupta

Chris E Karlsrud

Thomas Laursen

James Sinclair

Robert Clark Roberts

Jeffrey B Cunnane

William Manfred Daschbach

A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.

Method and apparatus for insitu adjustment of wafer slip detection during work piece polishing

Temperature controlled polishing pads are disclosed. In one aspect, a CMP system includes the use of any type of atomizing system to cool or remove energy and/or heat from the polishing pad of a CMP system. The atomizing system can use of any liquid medium in combination of any compressed gas through an orifice to cool or remove the energy and/or heat from the pad, thereby allowing for higher removal rates during CMP.

Temperature controlled substrate carrier and polishing components

A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.

Atmospheric plasma in wafer processing system optimization

Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

Containment and exhaust system for substrate polishing components

A substrate carrier head is disclosed. In one aspect, the carrier head includes a carrier body, a substrate retainer, a first resilient membrane and a second resilient membrane. The carrier head can include an inner support plate. The substrate retainer is attached to the carrier body. The substrate retainer includes an aperture configured to receive a substrate. The first resilient membrane includes a first imperforated substrate support portion with a width W. The second resilient membrane includes a second imperforated substrate support portion with a width W. The second imperforated substrate support portion is positioned between the first substrate support portion and the carrier body, and is configured to selectively provide a force against at least an inner section of the first imperforated substrate support portion. The inner support plate is fixed relative to the carrier body and includes a support surface configured to support the second imperforated substrate support portion.

Substrate carrier head and processing system

A system includes a CMP carrier that includes a resilient flexible membrane upon which a wafer is mounted, at least three ports for supplying air to the resilient flexible membrane to pneumatically pushing on the wafer through pressure applied throughout the surface area of the resilient flexible membrane to have more uniform pressure. Each port provides pressure to different components of the carrier to adjust pressure or vary pressure during processing of the wafer. Further, the system includes a processor and software program for implementing the CMP carrier with existing CMP machines. The software application converts the air pressure applied to the carrier into units that allow the CMP machine to receive expected data and operate in accordance with the existing commands.

Chemical mechanical planarization carrier system

A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states.

Method and apparatus for wafer backgrinding and edge trimming on one machine

An apparatus for performing both edge trimming and surface grinding includes two spindles for holding two workpieces, a bridge element laterally movable relative to the spindles, and two grinding wheels coupled to the bridge element. The apparatus may be a surface grinding apparatus that includes a system for enabling the surface grinding apparatus to additionally perform edge trimming. A method for processing the workpieces entails placing the two workpieces on the two spindles of the apparatus, directing the bridge element to move laterally to an edge trimming position to trim the outer edge of one workpiece using one of the grinding wheels, to move laterally to another edge trimming position to trim the outer edge of the other workpiece using one of the grinding wheels, and to move laterally to surface grinding positions to perform surface grinding on both of the workpieces using one or both of the grinding wheels.

Apparatus and method for surface grinding and edge trimming workpieces

A system () for adjusting an end effector () of an apparatus () includes a linear actuator () attachable with an arm () of the apparatus (). The system () further includes a first link member () having a first segment () operatively coupled with the linear actuator (), and a second link member () maintained in parallel alignment with a second segment () of the first link member (). The first and second link members () pivotally attach to the end effector (), and movement of the first segment () powered by the actuator () causes the first and second link members () to pivot producing movement of the end effector () relative to a workpiece (). A force transducer () interposed between the actuator () and the first link member () is utilized to control a pressure of the end effector () against the workpiece ().

System for adjusting an end effector relative to a workpiece

The invention improves a polishing process for a wafer retained in a multizone carrier in a chemical mechanical polishing tool. A light signal is communicated to the front surface of the wafer and the reflected light signal is captured by a metrology instrument. The metrology instrument communicates the intensity of the reflected light to a control system. The location or radial position corresponding to the reflected light signal from the front surface of the wafer may be determined by the control system. From the intensity measurements and corresponding locations, the control system is able to determine an approximate topography of the wafer. The control system may alter the pressure within one or more zones within the multizone carrier to improve the polishing process. The control system may also alter the initial pressures within the multizone carrier for future wafers based on the polishing results from the present wafer.

Multizone carrier with process monitoring system for chemical-mechanical planarization tool

Apparatus and method for cleaning, rinsing and drying work pieces such as semiconductor wafers. The apparatus can be combined, in an integrated apparatus, with a CMP machine. The apparatus includes one or more brush boxes with water tracks to convey work pieces to and from the brush boxes. Each brush box and its associated water track provide for the containment of cleaning agents such as HF used in the cleaning process so that different cleaning agents used in different brush boxes are kept segregated. The efficiency of the brush box is enhanced by providing for movement of work pieces back and forth through the brush box. Thus work pieces can make more than one pass through a brush box.

Wafer cleaning apparatus and associated wafer processing methods

The present invention provides an apparatus for cleaning semiconductor workpieces following a Chemical Mechanical Planarization ('CMP') procedure. Initially, a workpiece is scrubbed to remove some of the slurry material and other contaminants on the surfaces of the workpiece. Next, the workpiece is transported into a chemical-etch cleaning station wherein the workpiece is positioned horizontally such that both the upper and lower surfaces are substantially exposed. The workpiece then is immersed in a cleaning solution which is moved around the various surfaces of the workpiece. The workpiece is immersed in the cleaning solution for a sufficient length of time to remove an appropriate layer of oxide, thereby removing contaminants and smoothing micro scratches from the surfaces of the workpiece.

Post-CMP wet-HF cleaning station

A low profile gimbal system is provided to greatly reduce the generation of moments about a pivot point of the gimbal system during polishing processes. The gimbal system is adjustable so that a preferred balance between stiffness and friction may be selected as appropriate for a variety of different polishing conditions. A locking feature ensures that the adjustment setting is maintained during polishing.

Growing community of inventors

Phoenix, AZ, United States of America

Daniel R Trojan