Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Daniel P Spence

Xinjian Lei

Manchao Xiao

Ronald Martin Pearlstein

Mark Leonard O'Neill

Sergei Vladimirovich Ivanov

Haripin Chandra

Richard Ho

John Anthony Thomas Norman

Steven Gerard Mayorga

Bing Han

Moo-Sung Kim

Raymond Nicholas Vrtis

Jianheng Li

David A Roberts

Madhukar Bhaskara Rao

Anupama Mallikarjunan

Hansong Cheng

Wade Hampton Bailey, Iii

Robert Gordon Ridgeway

Laura M Matz

Melanie K Perez

Matthew R MacDonald

Meiliang Wang

William Robert Entley

Jennifer Lynn Anne Achtyl

Iain Buchanan

Suresh Kalpatu Rajaraman

Chenggang Zhou

Jinping Wu

Liam J Quinn

Bo Han

Sang-Hyun Yang

Iii Wade Hampton Bailey

Kim Moo-Sung

A composition, and chemical vapor deposition method, is provided for producing a dielectric film. A gaseous reagent including the composition is introduced into the reaction chamber in which a substrate is provided. The gaseous reagent includes a silicon precursor that includes a silicon compound according to Formula I as defined herein. Energy is applied to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents and to thereby deposit a film on the substrate. The film as deposited is suitable for its intended use without an optional additional cure step applied to the as-deposited film. A method for making the composition is also disclosed.

Silicon compounds and methods for depositing films using same

A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.

Precursors and flowable CVD methods for making low-k films to fill surface features

Organoamino-polysiloxanes, which have at least three silicon atoms, oxygen atoms, as well as an organoamino group, and methods for making the organoamino-polysiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-polysiloxanes are also disclosed.

Organoamino-polysiloxanes for deposition of silicon-containing films

Bisaminoalkoxysilanes of Formula I, and methods using same, are described herein:RSi(NRR)(NRR)OR&#x2003;&#x2003;Iwhere Ris selected from hydrogen, a Cto Clinear alkyl group, a Cto Cbranched alkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Caromatic hydrocarbon group; R, R, R, and Rare each independently selected from hydrogen, a Cto Cbranched alkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, and a Cto Caromatic hydrocarbon group; Ris selected from a Cto Clinear alkyl group, a Cto Cbranched alkyl group, a Cto Ccyclic alkyl group, a Cto Calkenyl group, a Cto Calkynyl group, and a Cto Caromatic hydrocarbon group.

Bisaminoalkoxysilane compounds and methods for using same to deposit silicon-containing films

A method and composition for producing a low k dielectric film via plasma enhanced chemical vapor deposition comprise the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursors comprising a silacycloalkane compound, an oxygen source, and optionally a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a low k dielectric film having dielectric constant of 3.2 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Silacycloalkane compounds and methods for depositing silicon containing films using same

Described herein is an FCVD process for depositing a silicon-containing film from at least one alkoxysilylamine precursor having the following Formulae A and B: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group and wherein R, R, R, R, and Rare independently selected from the group consisting of hydrogen, a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl, a Cto Caryl group, and a linear or branched Cto Calkoxy group.

Alkoxysilylamine compounds and applications thereof

Described herein are alkoxysilylamine precursors having the following Formulae A and B: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group and wherein R, R, R, R, and Rare independently selected from the group consisting of hydrogen, a linear or branched Cto Calkyl group, a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl, a Cto Caryl group, and a linear or branched Cto Calkoxy group. Also described herein are deposition processes using at least one precursor have Formulae A and/or B described herein.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: wherein Ris selected from linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, electron withdrawing group, and Cto Caryl group; Ris selected from hydrogen, linear or branched Cto Calkyl group, linear or branched Cto Calkenyl group, linear or branched Cto Calkynyl group, Cto Cdialkylamino group, Cto Caryl group, linear or branched Cto Cfluorinated alkyl group, electron withdrawing group, and Cto Caryl group; optionally wherein Rand Rare linked together to form ring selected from substituted or unsubstituted aromatic ring or substituted or unsubstituted aliphatic ring; and n=1 or 2.

Methods for depositing films with organoaminodisilane precursors

Described herein are compositions or formulations for forming a film in a semiconductor deposition process, such as without limitation, a flowable chemical vapor deposition of silicon oxide. Also described herein is a method to improve the surface wetting by incorporating an acetylenic alcohol or diol surfactant such as without limitation 3,5-dimethyl-1-hexyn-3-ol, 2,4,7,9-tetramethyl-5-decyn-4,7-diol, 4-ethyl-1-octyn-3-ol, and 2,5-dimethylhexan-2,5-diol, and other related compounds.

Compositions and methods using same for flowable oxide deposition

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I: wherein Rand Rare independently selected from linear or branched Cto Calkyl group, a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group, a Cto Cdialkylamino group, an electron withdrawing and a Cto Caryl group; Rand Rare independently selected from hydrogen, a linear or branched Cto Calkyl group, a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group, a Cto Cdialkylamino group, an electron withdrawing, and a Cto Caryl group; and wherein any one, all, or none of Rand R, Rand R, Rand R, or Rand Rare linked to form a ring.

Organoaminodisilane precursors and methods for depositing films comprising same

A stable formulation comprising a silicon containing precursor selected from an alkoxysilane, aryloxysilane, or alkylalkoxysilane and a catalyst compound comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane wherein the substitutents within the silicon-containing precursor and catalyst compound are the same are described herein. More specifically, the formulation comprises a silicon-containing precursor comprising an alkoxyalkylsilane or aryloxysilane having a formula of Si(OR)Rand a catalyst comprising haloalkoxyalkylsilane having a formula of XSi(OR)R; or a silicon-containing precursor comprising an alkoxysilane or aryloxysilane having a formula of R(RO)Si&#x2014;R&#x2014;Si(OR)Rand a catalyst comprising a haloalkoxyalkylsilane or haloaryloxyalkylsilane having a formula of (RO)R(X)Si&#x2014;R&#x2014;Si(OR)Rwherein at least one or all of the Rand Rsubstituents are the same in both the silicon-containing precursor and catalyst compound are described herein. The formulations can be used in semiconductor deposition process, such as for example, a flowable silicon oxide process.

Catalyst and formulations comprising same for alkoxysilanes hydrolysis reaction in semiconductor process

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided an aza-polysilane precursor comprising at least two Si&#x2014;N bonds, at least one Si&#x2014;Si bond, and at least two SiHgroups represented by the following Formula IA, IB and IC: wherein Rand Rare independently selected from a linear or branched Cto Calkyl group, a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group, Cto Ccyclic alkyl group, Cto Chetero-cyclic alkyl group, a Cto Caryl group, and a Cto Chetero-aryl group, a Cto Cdialkylamino group, a Cto Ccyclic alkylamino group; Rand Rare independently selected from hydrogen, a linear or branched Cto Calkyl group, a linear or branched Cto Calkenyl group, a linear or branched Cto Calkynyl group, Cto Ccyclic alkyl group, Cto Chetero-cyclic alkyl group, a Cto Caryl group, and a Cto Chetero-aryl group, a Cto Cdialkylamino group, a Cto Ccyclic alkylamino group; wherein Rin Formula IA cannot both be methyl, Rand Rin Formula IB cannot both be iso-propyl, tert-butyl, and bezenyl and Rand Rcannot both be methyl and phenyl.

AZA-polysilane precursors and methods for depositing films comprising same

Alkoxyaminosilane compound having formula I, and processes and compositions for depositing a silicon-containing film, are described herein:(RR)NSiROROR&#x2003;&#x2003;Formula (I)wherein Ris independently selected from a linear or branched Cto Calkyl group; a Cto Calkenyl group; a Cto Calkynyl group; a Cto Ccyclic alkyl group; and a Cto Caryl group; Rand Rare each independently selected from hydrogen; a linear or branched Cto Calkyl group; a Cto Calkenyl group, a Cto Calkynyl group, a Cto Ccyclic alkyl group, and a Cto Caryl group; and Rand Rare each independently selected from a linear or branched Cto Calkyl group; a Cto Calkenyl group; a Cto Calkynyl group; a Cto Ccyclic alkyl group; and a Cto Caryl group.

Growing community of inventors

Carlsbad, CA, United States of America

Daniel P Spence