Applied Materials, Inc.

Daniel Owen Clawson

Glen T Mori

Joe F Sommers

Mark D Menzie

Shyh-Nung Steve Lin

Lolita L Sharp

A component for a substrate processing chamber has a structure composed of aluminum oxide. The structure has a roughened surface having a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating of aluminum oxide is deposited on the roughened surface of the structure. The component may be a dome shaped ceiling of the chamber.

Chamber having components with textured surfaces and method of manufacture

A domed enclosure wall for a plasma processing chamber is made from a dielectric material having a roughened surface with a roughness average of from about 150 to about 450 microinches. A plasma sprayed ceramic coating is applied on the roughened surface of the dielectric material. The plasma sprayed coating comprises a textured surface having a roughness with an average skewness that is a negative value. When the enclosure wall is used in a plasma processing chamber, sputtered material generated by a plasma formed in a plasma processing chamber has good adherence to the textured surface.

Chamber components having textured surfaces and method of manufacture

A method for reducing particulate generation from regeneration of cryogenic vacuum pumps. The method comprises controlling a pressure ramp rate inside the cryopump during an initial introduction of a regeneration gas into the cryopump. Preferably, the pressure ramp rate is controlled by maintaining a first pressure ramp rate, preferably between about 0.03 T/s and 0.15 T/s, until a first pressure of about 0.3 T is reached inside the cryopump and maintaining a second pressure ramp rate between about 1 T/s and 5 T/s until the surface in the cryopump reaches an intermediate temperature between about 40 K and 100 K. Preferably, the temperature ramp rate is also controlled by heating the surface at a temperature ramp rate between about 0.1 K/s and about 0.5 K/s until the intermediate temperature has been reached. Preferably, the temperature ramp rate is controlled by regulating the flow of an inert gas into the cryopump using a flow restriction device. Alternatively, the second stage cryoarray temperature is increased at the rate of between 0.1 K/s and 0.5 K/s using a PID controlled heater.

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Santa Clara, CA, United States of America

Daniel Owen Clawson