Brewer Science, Inc.

Daniel M Sullivan

Qin Lin

Yubao Wang

Vandana Krishnamurthy

Sean Simmons

Charles J Neef

Jinhua Dai

Tony D Flaim

Runhui Huang

Hao Xu

Marc Weimer

Tantiboro Ouattara

Michael B Swope

Charlyn Stroud

The invention described herein is directed towards spin-on carbon materials comprising polyamic acid compositions and a crosslinker in a solvent system. The materials are useful in trilayer photolithography processes. Films made with the inventive compositions are not soluble in solvents commonly used in lithographic materials, such as, but not limited to PGME, PGMEA, and cyclohexanone. However, the films can be dissolved in developers commonly used in photolithography. In one embodiment, the films can be heated at high temperatures to improve the thermal stability for high temperature processing. Regardless of the embodiment, the material can be applied to a flat/planar or patterned surface. Advantageously, the material exhibits a wiggling resistance during pattern transfer to silicon substrate using fluorocarbon etch.

Spin-on carbon compositions for lithographic processing

This invention describes compositions and methods of using non-covalently crosslinked resin coatings for lithographic applications. These materials are designed to undergo, after coating, a change that provides solvent resistance and, with some materials, simultaneous aqueous-base solubility. Non-covalent interactions allow for easier removal of these coatings than of covalently crosslinked materials. These types of materials are well-suited for trench and gap fill applications, as well as for anti-reflective coatings, spin-on carbon layers, and etch masks.

Non-covalently crosslinkable materials for photolithography processes

Nonpolymeric compounds, compositions, and methods for forming microelectronic structures, and the structures formed therefrom are provided. The nonpolymeric compounds are ring-opened, epoxide-adamantane derivatives that comprise at least two epoxy moieties and at least one adamantyl group, along with at least one chemical modification group, such as a chromophore, bonded to a respective epoxy moiety. Anti-reflective and/or planarization compositions can be formed using these compounds and used in lithographic processes, including fabrication of microelectronic structures.

Nonpolymeric antireflection compositions containing adamantyl groups

A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask.

Reversal lithography approach by selective deposition of nanoparticles

Metal-oxide films for lithographic applications are provided. The films are formed from compositions comprising metal-oxide precursor compounds including metals and metalloids other than silicon. These films are easily produced and can be modified with a variety of ligands, including alkoxides, phenoxides, carboxylates, beta-diketones, and beta-ketoesters.

Metal-oxide films from small molecules for lithographic applications

Novel materials with thermally reversible curing mechanisms are provided. These inventive compositions are useful in forming microelectronic structures, such as dual damascene structures. The compositions comprise a crosslinkable polymer dispersed or dissolved in a solvent system with a crosslinking agent. In use, the compositions are applied to a substrate and crosslinked. Additional layers may be applied on top of the cured layer followed by additional processing steps. Upon exposure to a temperature above the crosslinking temperature of the composition, the cured layer will undergo a decrosslinking reaction to render the layer soluble in common photoresist solvents, including solvents used to make the composition itself. Thus, after processing, the remaining material can be dissolved away without damaging the substrate. The inventive materials are especially suited for processes involving low-k dielectric substrates.

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Vichy, MO, United States of America

Daniel M Sullivan