International Business Machines Corporation

Applied Materials, Inc.

Daniel M Heenan

Laertis Economikos

Fen Fen Jamin

Donald J Delehanty

Gopalakrishna B Prabhu

Joseph F Salfelder

James Hannah

Wayne R Swart

Srinivas R Mirmira

Joseph M Danza

Disclosed herein are a system and method of polishing a layer of a substrate. The disclosed method includes providing a polishing apparatus adapted to impart relative movement between a polishing pad and a substrate having a first layer to be polished; providing a liquid medium having a pH between 4 and 11 to an interface between the substrate and the polishing pad, the liquid medium including a pH controlling substance including at least one of an acid and a base, a carbonate and a stabilizer additive comprising at least one selected from the group consisting of amino acids and polyacrylic acid; and moving at least one of the substrate and the polishing pad relative to the other to polish the layer of the substrate.

Planarization system and method using a carbonate containing fluid

A method and polishing system for planarizing a substrate having one or more materials formed thereon. The method generally includes positioning the substrate in proximity with a polishing pad, dispensing a polishing fluid to the polishing pad, the polishing fluid being subjected to carbonation prior to being dispensed to the polishing pad, and polishing the substrate. The polishing system generally includes a polishing platen having a polishing pad disposed thereon and in proximity to the substrate, a controller configured to cause the polishing pad to contact the substrate, and a polishing fluid delivery system to deliver a polishing fluid to the polishing pad, the polishing fluid delivery system including a carbonation system.

Carbonation of pH controlled KOH solution for improved polishing of oxide films on semiconductor wafers

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Lagrangeville, NY, United States of America

Daniel M Heenan