Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.v.

Innovalight, Inc.

Albert-Ludwigs-Universitat Freiburg

Johann Wolfgang Goethe-Universitat Frankfurt Am Main

Daniel Kray

Kuno Mayer

Elena Rogojina

Maxim Kelman

Dmitry Poplavskyy

Stefan Reber

Giuseppe Scardera

Daniel Biro

Malcolm Abbott

Ralf Preu

Michael Burrows

Andreas Grohe

Stefan Glunz

Filip Granek

Jochen Rentsch

Gerhard Willeke

Ansgar Mette

Monica Aleman

Martin Zimmer

Arpad Mihai Rostas

Eva Zimmer

Elias Kirchgässner

Teresa Orellana Peres

Mark Schumann

Sybille Hopman

Bernd O Kolbesen

A liquid agent for the surface treatment of monocrystalline wafers, which contains an alkaline etching agent and also at least one low-volatile organic compound. Systems of this type can be used both for the cleaning, damage etch and texturing of wafer surfaces in a single etching step and exclusively for the texturing of silicon wafers with different surface quality, whether it now be wire-sawn wafers with high surface damage or chemically polished surfaces with minimum damage density.

Texturing and cleaning agent for the surface treatment of wafers and use thereof

The invention relates to a method for the precision processing of substrates, in particular for the microstructuring of thin layers, local dopant introduction and also local application of a metal nucleation layer in which a liquid-assisted laser, i.e. laser irradiation of a substrate which is covered in the regions to be processed by a suitable reactive liquid, is implemented.

Method for the precision processing of substrates

A method of forming a metal contact on a silicon substrate is disclosed. The method includes depositing a nanoparticle ink on a substrate surface in a pattern, the nanoparticle ink comprising set of nanoparticles and a set of solvents. The method also includes heating the substrate in a baking ambient to a first temperature and for a first time period in order to create a densified nanoparticle layer with a nanoparticle layer thickness of greater than about 50 nm. The method further includes depositing an SiNlayer on the substrate surface, SiNlayer having a SiNlayer thickness of between about 50 nm and about 110 nm; exposing the substrate to an etchant that is selective to the densified nanoparticle layer for a second time period and at a second temperature in order to create a via; and forming a metal contact in the via, wherein an ohmic contact is formed with the silicon substrate.

Methods of forming a metal contact on a silicon substrate

A method of forming a multi-doped junction is disclosed. The method includes providing a first substrate and a second substrate. The method also includes depositing a first ink on a first surface of each of the first substrate and the second substrate, the first ink containing a first set of nanoparticles and a first set of solvents, the first set of nanoparticles containing a first concentration of a first dopant. The method further includes depositing a second ink on a second surface of each of the first substrate and the second substrate, the second ink containing a second set of nanoparticles and a second set of solvents, the second set of nanoparticles containing a second concentration of a second dopant. The method also includes placing the first substrate and the second substrate in a back to back configuration; and heating the first substrate and the second substrate in a first drive-in ambient to a first temperature and for a first time period. The method further includes exposing the first substrate and the second substrate in the back to back configuration to a deposition ambient, the deposition ambient containing POCl, a carrier Ngas, a main Ngas, and a reactive Ogas for a second time period; and heating the first substrate and the second substrate in a second drive-in ambient to a third temperature for a third time period.

Methods of using a set of silicon nanoparticle fluids to control in situ a set of dopant diffusion profiles

A process and an apparatus used to subdivide objects ( ) into slices, in particular to manufacture wafers from semi-conducting monocrystalline blocks, wherein these blocks are subdivided into slices with the help of at least one cutting tool ( ), and under the influence of an etchant. Prior to completely cutting and subdividing the object ( ) (ingot) into individual slices (wafers), a separating foil ( ) is introduced into each cut slit ( ) to separate the slices. This efficiently prevents the resultant wafers from sticking together. The individual separation of the wafers is thus accomplished right when the cutting process takes place so that the necessary number of process steps to manufacture silicon wafers is reduced.

Process and apparatus to subdivide objects

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Freiburg, Germany

Daniel Kray