Intel Corporation

Daniel James Bahr

Charles Henry Wallace

Ruth Amy Brain

Mohit K Haran

Jason W Klaus

Reken Patel

James Jeong

Marvin Young Paik

Deepak S Rao

Debashish Basu

Seungdo An

Kilhyun Bang

An example via contact patterning method includes providing a pattern of alternating trench contacts and gates over a support structure. For each pair of adjacent trench contacts and gates, a trench contact is electrically insulated from an adjacent gate by a dielectric material and/or multiple layers of different dielectric materials, and the gates are recessed with respect to the trench contacts. The method further includes wrapping a protective layer of one or more dielectric materials, and a sacrificial helmet material on top of the trench contacts to protect them during the via contact patterning and etch processes for forming via contacts over one or more gates. Such a method may advantageously allow increasing the edge placement error margin for forming via contacts of metallization stacks.

Via contact patterning method to increase edge placement error margin

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Portland, OR, United States of America

Daniel James Bahr