Soitec

Corning Incorporated

S.o.i.tec Silicon on Insulator Technologies

Daniel Delprat

Sébastien Kerdiles

Ionut Radu

Nadia Ben Mohamed

Bernard Aspar

Patrick Reynaud

Arnaud Castex

Walter Schwarzenbach

Jeffrey Scott Cites

Eric Neyret

Christophe Figuet

Fabrice Lallement

Alex Usenko

Ta-Ko Chuang

Willy Michel

Bich-Yen Nguyen

Oleg Kononchuk

Christophe Maleville

Marcel Broekaart

Frédéric Allibert

Ludovic Ecarnot

Isabelle Bertrand

Carine Duret

Luciana Capello

Frédéric Metral

Young-Pil Kim

Damien Parissi

Alexander Usenko

Guilhem Alibert

Ta Ko Chuang

Cécile Delattre

Michael Stinco

Anatolie Lupu

Manuel Fendler

Nadia Ben-Mohamed

Séverin Rouchier

Bruno Clemenceau

Aymen Ghorbel

Stéphane Thieffry

Michael Lotissement Les Balcons Du Guiers Stinco

A handle substrate for a composite structure comprises a base substrate including an epitaxial layer of silicon on a monocrystalline silicon wafer obtained by Czochralski pulling, a passivation layer on and in contact with the epitaxial layer of silicon, and a charge-trapping layer on and in contact with the passivation layer. The monocrystalline silicon wafer of the base substrate exhibits a resistivity of between 10 and 500 ohm·cm, while the epitaxial layer of silicon exhibits a resistivity of greater than 2000 ohm·cm and a thickness ranging from 2 to 100 microns. The passivation layer is amorphous or polycrystalline. A method is described for forming such a substrate.

Method for forming a handling substrate for a composite structure intended for RF applications and handling substrate

The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.

Heterostructure and method of fabrication

A method for manufacturing a semiconductor on insulator type structure by transfer of a layer from a donor substrate onto a receiver substrate, comprises: a) the supply of the donor substrate and the receiver substrate, b) the formation in the donor substrate of an embrittlement zone delimiting the layer to transfer, c) the bonding of the donor substrate on the receiver substrate, the surface of the donor substrate opposite to the embrittlement zone with respect to the layer to transfer being at the bonding interface, and d) the detachment of the donor substrate along the embrittlement zone. A step of controlled modification of the curvature of the donor substrate and/or the receiver substrate is performed before the bonding step.

Method for manufacturing a semiconductor on insulator type structure by layer transfer

A method for manufacturing a structure comprising a first substrate comprising at least one electronic component likely to be damaged by a temperature higher than 400&#xb0; C. and a semiconductor layer extending on the first substrate comprises:

Method for manufacturing a structure for forming a tridimensional monolithic integrated circuit

A method for transferring a layer of semiconductor by providing a donor substrate that includes a useful layer of a semiconductor material, a confinement structure that includes a confinement layer of a semiconductor material having a chemical composition that is different than that of the useful layer, and two protective layers of semiconductor material that are distinct from the confinement layer with the protective layers being arranged on both sides of the confinement layer; introducing ions into a donor substrate, bonding the donor substrate to a receiver substrate, subjecting the donor and receiver substrates to a heat treatment that provides an increase in temperature during which the confinement layer attracts the ions in order to concentrate them in the confinement layer, and detaching the donor substrate from the receiver substrate by breaking the confinement layer.

Method for transferring a layer of a semiconductor and substrate comprising a confinement structure

A manufacturing process for a semiconductor-on-insulator structure having reduced electrical losses and which includes a support substrate made of silicon, an oxide layer and a thin layer of semiconductor material, and a polycrystalline silicon layer interleaved between the support substrate and the oxide layer. The process includes a treatment capable of conferring high resistivity to the support substrate prior to formation of the polycrystalline silicon layer, and then conducting at least one long thermal stabilization on the structure at a temperature not exceeding 950&#xb0; C. for at least 10 minutes.

Method for manufacturing a semiconductor on insulator structure having low electrical losses

Method for manufacturing a semiconductor-on-insulator structure having low electrical losses

A method for reducing irregularities at a surface of a layer transferred from a source substrate to a glass-based support substrate, by generating a weakening zone in the source substrate; contacting the source substrate and the glass-based support substrate; and splitting the source substrate at the weakening zone; wherein the glass-based substrate has a thickness of between 300 &#x3bc;m and 600 &#x3bc;m.

Method for reducing irregularities at the surface of a layer transferred from a source substrate to a glass-based support substrate

A method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

Method for molecular bonding of silicon and glass substrates

A semiconductor-on-glass substrate having a relatively stiff (e.g. relatively high Young's modulus of 125 or higher) stiffening layer or layers placed between the silicon film and the glass in order to eliminate the canyons and pin holes that otherwise form in the surface of the transferred silicon film during the ion implantation thin film transfer process. The new stiffening layer may be formed of a material, such as silicon nitride, that also serves as an efficient barrier against penetration of sodium and other harmful impurities from the glass substrate into the silicon film.

Semiconductor on glass substrate with stiffening layer

Method for manufacturing a semiconductor-on-insulator structure having low electrical losses, and corresponding structure

The present invention concerns a method for bonding a first substrate having a first surface to a second substrate having a second surface. This method includes the steps of holding the first substrate by at least two support points, positioning the first substrate and the second substrate so that the first surface and the second surface face each other, deforming the first substrate by applying between at least one pressure point and the two support points a strain toward the second substrate, bringing the deformed first surface and the second surface into contact, and progressively releasing the strain to facilitate bonding of the substrates while minimizing or avoiding the trapping of air bubbles between the substrates.

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Crolles, France

Daniel Delprat