Cabot Microelectronics Corporation

Cmc Materials, Inc.

Cmc Marerials LLC

Daniel Clingerman

Steven Grumbine

Jeffrey Dysard

Roman A Ivanov

Steven Kraft

Fernando Hung Low

Mary Cavanaugh

Ernest Shen

A chemical mechanical polishing composition for polishing a substrate includes a liquid carrier and cationic metal oxide abrasive particles dispersed in the liquid carrier. The cationic metal oxide abrasive particles have a surface modified with at least one compound consisting of a silyl group having at least one quaternary ammonium group. A method for chemical mechanical polishing a substrate including a metal layer includes contacting the substrate with the above described polishing composition, moving the polishing composition relative to the substrate, and abrading the substrate to remove a portion of the metal layer from the substrate and thereby polish the substrate.

Composition and method for metal CMP

Methods for fabricating a chemical-mechanical polishing composition include growing colloidal silica abrasive particles in a liquid including an aminosilane compound such that the aminosilane compound becomes incorporated in the abrasive particles. A dispersion including such colloidal silica abrasive particles may be further processed to obtain a chemical-mechanical polishing composition including colloidal silica particles having the aminosilane compound incorporated therein.

Methods for fabricating a chemical-mechanical polishing composition

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Daniel Clingerman