At&t Bell Laboratories

Agere Systems Guardian Corp.

Daniel C Sutryn

Jerome Levkoff

John W Benko

Montri Viriyayuthakorn

Julie Eng

Anthony D Mazzatesta

Erick John Michel

The invention is a method of fabricating a semiconductor device involving selectively etching at least a first semiconductor layer on a semiconductor wafer so as to perform a lateral taper etch in said layer, forming a second layer over the resulting etched region so as to planarize the etched area, and subsequently performing a second etch over a portion of the etched region so as to form a mesa geometry. This material allows device fabrication with a lateral taper, beneficial to monolithic integration of devices, such as expanded beam lasers, while reducing or eliminating unwanted increases in mesa width (mesa bulge) resulting from the lateral taper.

Method of fabricating a semiconductor mesa device

In an MOCVD reactor, gases are channeled around the periphery of a baffle plate (15) so as to flow radially inwardly along a slotted injection plate (16). The slots (22) in the injection plate extend radially and are of non-uniform width so as to compensate for a non-uniform rate of deposition. The resultant flow over a rotating heated substrate (17) gives a more uniform deposit of epitaxially grown material.

MOCVD method and apparatus

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Wyomissing Hills, PA, United States of America

Daniel C Sutryn