Shell Oil Comapny

Technische Universiteit

Daniel C Schram

Hubertus J Schuurmans

Jan Werner

Gerardus M Kroesen

Mauritius Cornelius Maria Van De Sanden

Edward Aloys Gerard Hamers

Arno Hendrikus Marie Smets

In a process and device for depositing an at least partially crystalline silicon layer a plasma is generated and a substrate () is exposed under the influence of the plasma to a silicon-containing source fluid for deposition of silicon therefrom. A pressure drop is applied between a location () where the source fluid is supplied and the substrate (). In addition to the source fluid an auxiliary fluid is also injected which is able to etch non-crystalline silicon atoms. The substrate () is exposed to both the source fluid and the auxiliary fluid.

Process and device for the deposition of an at least partially crystalline silicium layer on a substrate

A process for preparing membrane layers employing an apparatus suitable for plasma surface treating (e.g. forming a membrane layer on a substrate) which comprises a plasma generation section which is operable at least at substantially atmospheric pressure and is in communication via at least one plasma inlet (e.g. a nozzle) with an enclosed plasma treating section which is operable at a lower pressure than the plasma generation section, and wherein the plasma treating-section is in communication with an inlet for a fluid (e.g. polymerizable) reactant. A plasma beam generated in the apparatus and containing at least one fluid reactant impinges on the surface of a substrate to form a membrane layer.

Method for plasma surface treating and preparation of membrane layers

An apparatus suitable for plasma surface treating (e.g., forming a membrane layer on a substrate surface) comprises a plasma generation section which is operable at least at substantially atmospheric pressure and is in communication via at least one plasma inlet (e.g., a nozzle) with an enclosed plasma treating section which is operable at a lower pressure than the plasma generation section, and wherein the plasma treating-section is in communication with an inlet for a fluid (e.g., polymerizable) reactant used to form a layer on the substrate surface.

Apparatus for plasma surface treating and preparation of membrane layers

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Eindhoven, Netherlands

Daniel C Schram