Lam Research Corporation

Daniel Boatright

Eli Jeon

Akhil N Singhal

Joseph Abel

Douglas Walter Agnew

Michael Philip Roberts

Dustin Zachary Austin

Alon Ganany

William Laurence McDaniel

Arun Anandhan Duraisamy

Kyle Watt Hart

Debotosh Poddar

Philip Chen

Kashyap Subramanya

Showerhead for a substrate processing system

The present disclosure relates to a system for a semiconductor processing. The system includes a semiconductor processing chamber having a plurality of processing stations, a plurality of manifold trunks, a plurality of valves, and a plurality of fluid manifolds. Each manifold trunk includes an outlet, a common flowpath, a plurality of trunk inlets, a plurality of orifices, and a plurality of valve interfaces.

Apparatuses for uniform fluid delivery in a multi-station semiconductor processing chamber

Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO) films includes using thionyl chloride (SOCl) chemistry to produce an etch rate of the SnOfilms of up to 10-times higher as compared with Clchemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnOfilms by using the SOCl, thereby forming volatile SOand volatile SnClto provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.

Etching metal-oxide and protecting chamber components

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Estacada, OR, United States of America

Daniel Boatright