Lumileds Lighting U.s., LLC

Koninklijke Philips Corporation N.v.

Philips Lumileds Lighting Company LLC

Lumileds LLC

Hewlett-packard Company

Lumileds Holding B.v.

Daniel Alexander Steigerwald

Jerome Chandra Bhat

Paul Scott Martin

Michael Ragan Krames

Michael Joseph Ludowise

Michael David Camras

Stefano Schiaffino

Jonathan J Wierer, Jr

Serge Laurent Rudaz

Fred A Kish, Jr

Frederic Stephane Diana

Yajun Wei

Frank Lili Wei

Qingwei Mo

John Edward Epler

Frank Michael Steranka

Stephen Andrew Stockman

Kwong-Hin Henry Choy

Jipu Lei

Changhua Chen

Pradeep Rajkomar

Salman Akram

Yu-Chen Shen

Alexander H Nickel

Werner K Goetz

William David Collins, Iii

R Scott Kern

Tun Sein Tan

Chihping Kuo

Steven A Maranowski

Gina L Christenson

Steven D Lester

Grigoriy Basin

Matthijs Hendrik Keuper

Henry Kwong-Hin Choy

Robert M Fletcher

Fred A Kish

Tal Margalith

Mari Holcomb

Nathan Fredrick Gardner

Decai Sun

Oleg Borisovich Shchekin

Wayne L Snyder

Han Ho Choi

William R Imler

Ashim Shatil Haque

Reena Khare

R Scott West

Jason L Posselt

Jérôme Chandra Bhat

Stefano Schiafino

Kyle J Thomas

Serge I Rudaz

Xiaoping Chen, Legal Representative

William D Collins Iii

Frank L Wei

Serge L Rudaz

Jerome C Bhat

Tun S Tan

Iii William D Collins

In embodiments of the invention, a passivation layer is disposed over a side of a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A material configured to adhere to an underfill is disposed over an etched surface of the semiconductor structure.

Passivation for a semiconductor light emitting device

A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer is formed in the gap followed by filling the gap with a metal. The metal is patterned to form stud bumps that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.

P&#x2014;N separation metal fill for flip chip LEDs

A method according to embodiments of the invention includes providing a wafer including a semiconductor structure grown on a growth substrate, the semiconductor structure comprising a III-nitride light emitting layer sandwiched between an n-type region and a p-type region. The wafer is bonded to a second substrate. The growth substrate is removed. After bonding the wafer to the second substrate, the wafer is processed into multiple light emitting devices.

Method of processing a semiconductor structure

A light emitting diode (LED) structure has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface though which light is emitted. A copper layer has a first portion electrically connected to and opposing the bottom surface of the p-type layer. A dielectric wall extends through the copper layer to isolate a second portion of the copper layer from the first portion. A metal shunt electrically connects the second portion of the copper layer to the top surface of the n-type layer. P-metal electrodes electrically connect to the first portion, and n-metal electrodes electrically connect to the second portion, wherein the LED structure forms a flip chip. Other embodiments of the methods and structures are also described.

LED having vertical contacts redistributed for flip chip mounting

P-n separation metal fill for flip chip LEDs

A method according to embodiments of the invention includes providing a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a light emitting layer sandwiched between an n-type region and a p-type region. A wafer of support substrates is provided, each support substrate including a body. The wafer of semiconductor light emitting devices is bonded to the wafer of support substrates. Vias are formed extending through the entire thickness of the body of each support substrate.

Method of attaching a light emitting device to a support substrate

A light emitting diode (LED) structure () has semiconductor layers, including a p-type layer, an active layer, and an n-type layer. The p-type layer has a bottom surface, and the n-type layer has a top surface through which light is emitted. Portions of the p-type layer and active layer are etched away to expose the n-type layer. The surface of the LED is patterned with a photoresist, and copper is plated over the exposed surfaces to form p and n electrodes electrically contacting their respective semiconductor layers. There is a gap between the n and p electrodes. To provide mechanical support of the semiconductor layers between the gap, a dielectric layer () is formed in the gap followed by filling the gap with a metal (). The metal is patterned to form stud bumps () that substantially cover the bottom surface of the LED die, but do not short the electrodes. The substantially uniform coverage supports the semiconductor layer during subsequent process steps.

P-N separation metal fill for flip chip LEDs

The substrate that is used to support the growth of the LED structure is used to support the creation of a superstructure above the LED structure. The superstructure is preferably created as a series of layers, including conductive elements that forma conductive path from the LED structure to the top of the superstructure, as well as providing structural support to the light emitting device. The structure is subsequently inverted, such that the superstructure becomes the carrier substrate for the LED structure, and the original substrate is thinned or removed. The structure is created using materials that facilitate electrical conduction and insulation, as well as thermal conduction and dissipation.

Light emitting device chip scale package

LED layers are grown over a sapphire substrate. Individual flip chip LEDs are formed by trenching or masked ion implantation. Modules containing a plurality of LEDs are diced and mounted on a submount wafer. A submount metal pattern or a metal pattern formed on the LEDs connects the LEDs in a module in series. The growth substrate is then removed, such as by laser lift-off. A semi-insulating layer is formed, prior to or after mounting, that mechanically connects the LEDs together. The semi-insulating layer may be formed by ion implantation of a layer between the substrate and the LED layers. PEC etching of the semi-insulating layer, exposed after substrate removal, may be performed by biasing the semi-insulating layer. The submount is then diced to create LED modules containing series-connected LEDs.

Series connected flip chip LEDs with growth substrate removed

Growing community of inventors

Cupertino, CA, United States of America

Daniel Alexander Steigerwald