Hoechst Celanese Corporation

Clariant Finance (bvi) Limited

American Hoechst Corporation

Dana L Durham

M Dalil Rahman

Dinesh N Khanna

Ralph R Dammel

Ping-Hung Lu

Mark A Spak

Sangya Jain

Donald C Mammato

Shuji Ding

Joseph E Oberlander

Daniel P Aubin

Iain McCulloch

Jianhui Shan

Chester J Sobodacha

Thomas J Lynch

Ming Kang

Michael J McFarland

Douglas A Usifer

Michael G Kelly

Sunit S Dixit

Lawrence Crane

Elaine G Kokinda

Anthony J Corso

Eleazer Gonzalez

Lawrence F Spinicelli

Mark S Slezak

The invention relates to the field of microelectronics, such as integrated circuits, and more particularly to compositions and methods of removing photoresists or other organic materials from the surfaces of substrates used in the fabrication of integrated circuits. In particular the present invention relates to amine-free stripping compositions comprising solvent and surfactant that can effectively remove organic materials without corroding the underlying substrate, and the invention also relates to methods for removing these organic materials with the novel stripping composition.

Composition for stripping photoresist and organic materials from substrate surfaces

The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or mixture of solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and does not contain a crosslinking group.

Antireflective coating for photoresist compositions

The present invention relates to an antireflective coating composition comprising an admixture of:

Antireflective coating material for photoresists

The present invention relates to an antireflective coating composition comprising a novel polymer in a solvent composition. The invention further comprises processes for using the antireflective coating composition in photolithography. The antireflective coating composition comprises a novel polymer and a solvent composition, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The solvent may be organic, preferrably, a solvent of low toxicity, or it may be water, which may additionally contain other water miscible organic solvents.

Antireflective coating compositions for photoresist compositions and use

The present invention relates to a novel polymer suitable for use as an antireflective coating or as an additive in photoresist for absorption of reflected light. The novel polymer comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm and at least one unit that contains no aromatic funtionality. The polymer is soluble in organic solvents, preferrably solvents of low toxicity, or it may be soluble in water, which may additionally contain other water miscible organic solvents.

Light absorbing polymers

A light sensitive positive composition comprising an alkali soluble resin, a novel photoactive compound represented by the structure ##STR1## where, X is O, S or N--R', where R' is H, alkyl, substituted alkyl, aryl or aralkyl,

Positive photoresists containing novel photoactive compounds

The present invention relates to novel photosensitive quinolone compounds, specifically novel 3-diazo 2,4-quinolinedione compounds, that may be used in a variety of applications, such as, photosensitive coating compositions, pharmaceuticals, agricultural, amongst others. The invention further relates to a process for making the novel photosensitive 3-diazo 2,4-quinolinedione compounds. These compounds are particularity useful as a photoactive component in a positive working photoresist composition, particularity for use as a deep ultraviolet (UV) photoresist.

Photosensitive quinolone compounds and a process of preparation

The present invention relates to a novel antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and an organic solvent or a mixture of organic solvents, where the novel polymer comprises a unit containing a dye that absorbs from about 180 nm to about 450 nm and a unit containing a crosslinking group.

The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.

Method of using a Lewis base to control molecular weight of novolak

The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and a very low level of metal ions, utilizing a solid acid condensation catalyst. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.

Acidic ion exchange resin as a catalyst to synthesize a novolak resin

Antireflective coatings for photoresist compositions

The present invention relates to a novel aqueous antireflective coating solution and a process for its use in photolithography. The antireflective coating solution comprises a novel polymer and water, where the novel polymer of the antireflective coating comprises at least one unit containing a dye that absorbs from about 180 nm to about 450 nm, at least one unit containing a crosslinking group and at least one unit derived from a hydrophilic vinyl monomer or a vinyl monomer capable of becoming hydrophilic.

Aqueous antireflective coatings for photoresist compositions

The present invention relates to a water insoluble, aqueous alkali soluble novolak resin blend, wherein the resin blend comprises two novolaks having dissimilar relative molecular weights and similar dissolution rates, a process for producing such a resin blend, a photoresist containing such a resin blend and a method for producing a semi-conductor device utilizing such a photoresist.

Novolak resin blends for photoresist applications

The present invention provides methods for producing top anti-reflective coating compositions having a very low level of metal ions, utilizing specially treated ion exchange resins. A method is also provided for producing semiconductor devices using such top anti-reflective coating compositions.

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Flemington, NJ, United States of America

Dana L Durham