Kla Instruments Corporation

Ultratech Stepper, Inc.

Dan Meisburger

Alan D Brodie

Jack Y Jau

David A Markle

Zhong-wei Chen

David J Clark

Lee H Veneklasen

Chung-Shih Pan

Curt H Chadwick

John S Taylor

John D Greene

Ralph T Johnson

Richard R Simmons

Eric Munro

Brian J Grenon

Chetana Bhaskar

Anil A Desai

Timothy L Hutcheson

Barry Becker

John McMurtry

April Dutta

Dennis G Emge

Henry Pearce-Percy

Paul Wieczorek

Kirkwood Rough

Hoi T Nguyen

Yen-Jen Oyang

Chris Kirk

Ming-Yie Ling

Hans Dohse

Chun C Lin

Ray Paul

Mike Robinson

David E Smith

Dean Walters

Sam Wong

Surendra Lele

A lithography system and method for cost-effective device manufacture that can employ a continuous lithography mode of operation is disclosed, wherein exposure fields are formed with single pulses of radiation. The system includes a pulsed radiation source ( ), an illumination system ( ), a mask (M), a projection lens ( ) and a workpiece stage ( ) that supports a workpiece (W) having an image-bearing surface (WS). A radiation source controller ( ) and a workpiece stage position system ( ), which includes a metrology device ( ), are used to coordinate and control the exposure of the mask with radiation pulses so that adjacent radiation pulses form adjacent exposure fields (EF). Where pulse-to-pulse uniformity from the radiation source is lacking, a pulse stabilization system ( ) may be optionally used to attain the desired pulse-to-pulse uniformity in exposure dose. The rapidity at which exposures can be made using a single radiation pulse allows for a very high throughput, which in turn allows for a small-image-field projection lens to be utilized in a cost-effective manner in the manufacture of devices such as semiconductor integrated circuits and the like. The system can also be used in the conventional &ldquo;step-and-repeat&rdquo; mode of operation, so that the system owner can decide the most cost-effective mode of operation for any given application.

Lithography system and method for device manufacture

A system and method of compensating for image smear that arises when imaging onto a moving workpiece with a single pulse of radiation. The system includes a mask frame capable of supporting a mask to be imaged. The mask frame is operatively connected to a drive unit and is capable of moving in the mask plane. The mask frame is driven in an oscillatory fashion in the mask plane so that when a pulse of radiation illuminates the mask, the mask image moves in the same direction as the moving workpiece, thereby reducing image smear. The present invention is particularly applicable to single-pulse-exposure systems that utilize pulsed radiation sources having relatively long pulse duration, such as flash-lamps or certain types of lasers.

Motion compensation system and method for lithography

An apparatus scans an electron beam across an optical phase shift mask and automatically inspects the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x - y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.

Inspecting optical masks with electron beam microscopy

There is disclosed an apparatus to scan an electron beam across an optical phase shift mask and automatically inspect the mask to determine the features of the phase shift mask and classification of defects. An electron beam is directed at the surface of a mask for scanning that mask and detectors are provided to measure the secondary and backscattered charged particles from the surface of the mask. The mask is mounted on an x-y stage to provide it with at least one degree of freedom while the mask is being scanned by the electron beam. By analysis of various waveform features in each of the secondary and backscatter electron waveforms obtained from a phase shift mask, various physical features of the mask can be detected, as well as their size and position determined. The thickness of chromium layers can also be determined. In the inspection configuration, there is also a comparison technique for comparing the pattern on the substrate with a second pattern for error detection.

There is disclosed numerous embodiments of a method and apparatus for a particle scanning system and an automatic inspection system. In each of these a particle beam is directed at the surface of a substrate for scanning that substrate. Also included are a selection of detectors to detect at least one of the secondary particles, back-scattered particles and transmitted particles from the substrate. The substrate is mounted on an x-y stage to provide it with at least one degree of freedom while the substrate is being scanned by the/particle beam. The substrate is also subjected to an electric field on it's surface to accelerate the secondary particles. The system also has the capability to accurately measure the position of the substrate with respect to the charged particle beam. Additionally, there is an optical alignment means for initially aligning the substrate beneath the,particle beam means. To function most efficiently there is also a vacuum means for evacuating and repressurizing a chamber containing the substrate. The vacuum means can be used to hold one substrate at vacuum while a second one is being loaded/unloaded, evacuated or repressurized. Alternately, the vacuum means can simultaneously evacuate a plurality of substrates prior to inspection and repressurize of the same plurality of substrates following inspection. In the inspection configuration, there is also a comparison means for comparing the pattern on the substrate with a second pattern.

Electron beam inspection system and method

Growing community of inventors

San Jose, CA, United States of America

Dan Meisburger