Lam Research Corporation

Novellus Systems Incorporated

Damien Martin Slevin

Karl Frederick Leeser

Timothy Scott Thomas

Miguel Benjamin Vasquez

Ramesh Chandrasekharan

Bin Luo

Adrien Lavoie

Ming Chu Li

Mohamed Sabri

James Samuel Sims

Sirish K Reddy

David Michael French

Curtis Warren Bailey

Joel Philip Hollingsworth

Brad Laird

Saangrut Sangplug

Jeremy Jerome Pool

Richard M Blank

Chunguang Xia

John Wiltse

Vince Burkhart

Vincent Burkhart

Robert Anthony Sculac

Michael Nordin

Thomas G Jewell

David William Kamp

Allan Matthew Jones

Dave Kamp

A process module for a substrate processing tool includes a plurality of processing stations each configured to perform a process on a substrate and a mechanical indexer arranged within the process module. The mechanical indexer includes a plurality of end effectors including at least a first end effector, a second end effector, and a third end effector. Each of the plurality of end effectors extends in a radial direction from a central axis of the mechanical indexer and is configured to rotate about the central axis within the process module. The mechanical indexer is configured to position each of the plurality of end effectors at any one of the plurality of processing stations within the process module. The mechanical indexer is configured to position more than one of the plurality of end effectors at a same one of the plurality of processing stations at a same time.

Mechanical indexer for multi-station process module

A thermal choke rod connecting a radio frequency source to a substrate support of a plasma processing system includes a tubular member having a first connector for connecting to an RF rod coupled to the substrate support and a second connector for connecting to an RF strap that couples to the RF source. A tubular segment extends between the first and second connectors. The first connector has a conically-shaped end region that tapers away from the inner surface thereof to an outer surface in a direction toward the tubular segment, and slits that extend for a prescribed distance from a terminal end of the first connector. The outer surface of the tubular segment has a threaded region for threaded engagement with an annular cap that fits over the first connector and reduces an inner diameter of the first connector upon contact with the conically-shaped end region of the first connector.

High temperature RF connection with integral thermal choke

Cooling plate for a semiconductor processing apparatus

An apparatus and method electrically coupling an electrostatic chuck RF filter box with a pedestal lift. The RF filter box has a contact block and at least one alignment feature on an outer mating surface of the RF filter block. The contact block includes self-aligning electrical connectors and the alignment feature is configured for aligning self-aligning electrical connectors with corresponding electrical connectors on the bracket of the pedestal lift such that the self-aligning electrical connectors and the corresponding electrical connectors on the bracket of the pedestal lift automatically mate when the contact block is mounted to the bracket of the pedestal lift.

Electrostatic chuck filter box and mounting bracket

A cluster tool system, including: a load lock; a first wafer transfer module; a buffer module; a second wafer transfer module; wherein the load lock, the first wafer transfer module, the buffer module, and the second wafer transfer module are positioned in a linear arrangement; a first process module connected to the first wafer transfer module on a first side of the linear arrangement; a second process module connected to the second wafer transfer module on the first side; a third process module connected to the first wafer transfer module on a second side of the linear arrangement that is opposite the first side; a fourth process module connected to the second wafer transfer module on the second side; a first ladder assembly connected to the buffer module on the first side; a second ladder assembly connected to the buffer module on the second side.

Cluster tool system with step ladder assembly

A showerhead tilt adjustment mechanism is provided which supports a showerhead module in a top plate of a semiconductor substrate processing apparatus, the showerhead tilt adjustment mechanism including a differential screw which provides coarse and fine adjustments to adjust gap/tilt/planarization of a faceplate of the showerhead module with respect to an upper surface of a substrate pedestal module adjacent the faceplate in the semiconductor substrate processing apparatus.

Showerhead tilt mechanism

A ladder assembly is provided, including the following: a mounting plate that connects to a side surface of a module in a fabrication facility; a step ladder, including, a ladder frame having an arm that connects to the mounting plate at a first joint, wherein the step ladder rotates about the first joint between a lowered position and a raised position, the lowered positioned defined by resting of the step ladder on a floor of the fabrication facility, and the raised position defined by suspension of the step ladder off of the floor and substantially over the module; a plurality of step plates connected to the ladder frame, the step plates defining step surfaces for a user when the step ladder is in the lowered position. A sleeve extends below one of the step plates of the step ladder, to house electronic equipment used in the fabrication facility.

Step ladder with component rack system for fabrication facility

A face plate of a showerhead assembly of a deposition apparatus in which semiconductor substrates are processed includes gas holes arranged in an asymmetric pattern with a hole density which is substantially uniform or varies across the face plate. The face plate can include a lower wall and an outer wall extending vertically upwardly from an outer periphery of the lower wall. The outer wall is sealed to an outer periphery of a back plate such that an inner plenum is formed between the face plate and the back plate. The gas hole pattern in the face plate avoids symmetry which can cause defects on processed substrates.

Showerhead assembly

A method for supplying vapor to a chamber includes providing a first diverter valve that, when open, diverts vapor away from the chamber, and a second diverter valve that, when open, supplies the vapor to the chamber; supplying a carrier gas to the chamber; after supplying the carrier gas, creating plasma in the chamber while a substrate is in the chamber; opening the first diverter valve and closing the second diverter valve; supplying the vapor by vaporizing at least one liquid precursor in a carrier gas; after a first predetermined period sufficient for the vapor to reach steady-state flow, closing the first diverter valve and opening the second diverter valve to supply the vapor to the chamber; and after a second predetermined period following the first predetermined period, opening the first diverter valve and closing the second diverter valve to stop supplying the vapor to the chamber.

Method for supplying vaporized precursor

Disclosed herein are methods of depositing layers of material on multiple semiconductor substrates at multiple processing stations within one or more reaction chambers. The methods may include dosing a first substrate with film precursor at a first processing station and dosing a second substrate with film precursor at a second processing station with precursor flowing from a common source, wherein the timing of said dosing is staggered such that the first substrate is dosed during a first dosing phase during which the second substrate is not substantially dosed, and the second substrate is dosed during a second dosing phase during which the first substrate is not substantially dosed. Also disclosed herein are apparatuses having a plurality of processing stations contained within one or more reaction chambers and a controller with machine-readable instructions for staggering the dosing of first and second substrates at first and second processing stations.

Sequential precursor dosing in an ALD multi-station/batch reactor

A point-of-use valve (POU valve) manifold is provided that allows for multiple precursors to be delivered to a semiconductor processing chamber through a common outlet. The manifold may have a plurality of precursor inlets and a purge gas inlet. The manifold may be configured such that there are zero dead legs in the manifold when the purge gas is routed through the manifold, and may provide mounting location for the POU valves that alternate sides. One or more internal flow path volumes may include elbow features.

Point of use valve manifold for semiconductor fabrication equipment

Growing community of inventors

Salem, OR, United States of America

Damien Martin Slevin