Carl Zeiss Smt Gmbh

Carl-Zeiss-Smt Ag

Asml Netherlands B.v.

Asml Holding N.v.

Carl Zeiss Smt Gbmh

Damian Fiolka

Manfred Maul

Markus Deguenther

Johannes Wangler

Michael Layh

Michael Patra

Michael Totzeck

Yim-Bun Patrick Kwan

Stefan Xalter

Andras G Major

Markus Schwab

Jan Horn

Florian Bach

Johannes Eisenmenger

Nils Dieckmann

Toralf Gruner

Axel Scholz

Markus Brotsack

Gundula Weiss

Martin Endres

Daniel Kraehmer

Christian Wagner

Aksel Goehnermeier

Ingo Saenger

Joachim Hartjes

Wilhelmus Petrus De Boeij

Vladimir Davydenko

Olaf Dittmann

Gerhard-Wilhelm Ziegler

Ralf Stuetzle

Tilmann Heil

Wolfgang Seitz

Markus Zenzinger

Wolfgang Singer

Hartmut Enkisch

Ralf Mueller

Frank Melzer

Alexandra Pazidis

Stephan Muellender

Gerhard Fuerter

Roel De Jonge

Daniel Walldorf

Marc Kirch

Michael Ricker

Wilhelm Ulrich

Karl-Heinz Schuster

Markus Hauf

Udo Dinger

Alexander Kohl

Wilfried Clauss

Berndt Warm

Severin Waldis

Jens Ossmann

Ralf Scharnweber

Vladan Blahnik

Michael M Albert

Joerg Schultz

Boaz Pnini-Mittler

Gerd Reisinger

Yim-Bun-Patrick Kwan

Jess Koehler

Juergen Baier

Dieter Schmerek

Markus Degünther

Detlev Mueller

Frank Marianek

Jürgen Hartmaier

András G Major

Holger Weigand

Juergen Hartmaier

Otto Hahnemann

Ralf Müller

Matthias Kuss

András Major

Christian Steigerwald

Marc Rohe

Ralf STÜTZLE

Detlev Müller

The disclosure concerns an illumination system of a microlithographic projection exposure apparatus. The illumination system includes a mirror arrangement which has a plurality of mirror units and at least one element arranged in front of the mirror arrangement in the light propagation direction to produce at least two different states of polarization incident on different mirror units. The mirror units are displaceable independently of each other for altering an angle distribution of the light reflected by the mirror arrangement.

Illumination system of a microlithographic projection exposure apparatus with a birefringent element

A microlithography projection exposure apparatus includes illumination optics configured to illuminate object field points of an object field in an object plane, and projection optics configured to image the object field onto an image field in an image plane. The illumination optics includes a multi-mirror array which includes a plurality of mirrors configured to adjust an intensity distribution in exit pupils associated with the object field points. The illumination optics also includes an optical system configured to produce, via an incoherent superposition of illumination rays, a temporal modification of a temporal stabilization of an illumination of the multi-mirror array. The optical system includes a mirror which includes a mirror surface. In addition, the optical system includes an actuator configured to produce a tilt of at least a portion of the mirror surface.

Microlithographic projection exposure apparatus having a multi-mirror array with temporal stabilisation

An illumination system of a microlithographic projection exposure apparatus includes a spatial light modulator which varies an intensity distribution in a pupil surface. The modulator includes an array of mirrors that reflect impinging projection light into directions that depend on control signals applied to the mirrors. A prism, which directs the projection light towards the spatial light modulator, has a double pass surface on which the projection light impinges twice, namely a first time when leaving the prism and before it is reflected by the mirrors, and a second time when entering the prism and after it has been reflected by the mirrors. A pupil perturbation suppressing mechanism is provided that reduces reflections of projection light when it impinges the first time on the double pass surface, and/or prevents that light portions being a result of such reflections contribute to the intensity distribution in the pupil surface.

Illumination system of a microlithographic projection exposure apparatus

Microlithographic illumination system includes individually drivable elements to variably illuminate a pupil surface of the system. Each element deviates an incident light beam based on a control signal applied to the element. The system also includes an instrument to provide a measurement signal, and a model-based state estimator configured to compute, for each element, an estimated state vector based on the measurement signal. The estimated state vector represents: a deviation of a light beam caused by the element; and a time derivative of the deviation. The illumination system further includes a regulator configured to receive, for each element: a) the estimated state vector; and b) target values for: i) the deviation of the light beam caused by the deviating element; and ii) the time derivative of the deviation.

Method and device for monitoring multiple mirror arrays in an illumination system of a microlithographic projection exposure apparatus

An illumination optical unit for microlithography illuminates an object field with illumination light. The unit includes a first facet mirror that has a plurality of first facets, and a second facet mirror that has a plurality of second facets. The unit has facet pairs which include respectively a facet of the first facet mirror and a facet of the second facet mirror which predefine a plurality of illumination channels for illuminating the object field. At least some of the illumination channels have in each case an assigned polarization element for predefining an individual polarization state of the illumination light guided in the respective illumination channel.

Microlithography illumination system and microlithography illumination optical unit

The disclosure relates to an EUV microlithography projection exposure apparatus having an exposure light source for producing radiation in a first spectral range from 5 nm-15 nm, and a heat light source for producing radiation in a second spectral range from 1-50 &#x3bc;m. The apparatus also includes an optical system having a first group of mirrors for guiding radiation from the first spectral range along a light path such that each mirror in the first group can have a first associated intensity distribution applied to it in the first spectral range during operation of the exposure light source. The heat light source is arranged such that at least one mirror in the first group can have a second associated intensity distribution in the second spectral range applied to it during operation of the heat light source. The first intensity distribution differs from the second intensity distribution essentially by a position-independent factor.

EUV microlithography projection exposure apparatus with a heat light source

A microlithography optical system includes a projection objective and an illumination system that includes a temperature compensated polarization-modulating optical element. The temperature compensated polarization-modulating optical element includes a first polarization-modulating optical element of optically active material, the first polarization-modulating optical element having a first specific rotation with a sign. The temperature compensated polarization-modulating optical element includes also includes a second polarization-modulating optical element of optically active material, the second polarization-modulating optical element having a second specific rotation with a sign opposite to the sign of the first specific rotation.

Polarization-modulating optical element

The invention relates to an optical element for a projection exposure apparatus for semiconductor lithography comprising an optically active surface and at least one cooling component for cooling the optical element, wherein the cooling component is connected to at least two separate cooling circuits and embodied in such a way that the optically active surface can be cooled to a greater extent in at least one partial region than in a further partial region. The invention furthermore relates to a projection exposure apparatus comprising an optical element according to the invention.

Liquid cooled EUV reflector

An optical system for semiconductor lithography including a plurality of optical components, as well as related components and methods, are disclosed. The apparatus can include an optical component that can be moved by a distance along a straight line within a time of between 5 ms and 500 ms. The straight line can have a polar and azimuth angle of between 0&#xb0; and 90&#xb0;, and a distance between the straight line and an optical axis of the apparatus being less than a cross-sectional dimension of a projection exposure beam bundle of the projection exposure apparatus. The apparatus can also include a guide unit configured to guide the optical component. The apparatus can further include a drive unit configured to drive the optical component via drive forces so that torques generated by inertial forces of the optical component and of optional components concomitantly moved with the optical component, and the torques generated by the drive forces, which act on the guide unit, compensate for one another to less than 10%.

Optical system for semiconductor lithography

Methods of producing a polarization-modulating element that modulates a polarization state of incident light into a predetermined polarization state, the polarization-modulating element being used with an illumination optical apparatus, include preparing an optical material having optical activity, and providing the optical material with a circumferentially varying thickness profile and a central region that is an aperture having no optical activity. The thickness profile is set so that light in a linearly polarized state having a direction of polarization substantially along a single direction, is transformed into light in an azimuthal polarization state having a direction of polarization substantially along a circumferential direction or into light in a radially polarized state having a direction of polarization substantially along the radial direction.

Producing polarization-modulating optical element for microlithography system

An illumination system for EUV microlithography includes an EUV light source which generates EUV illumination light with an etendue that is higher than 0.01 mm. The EUV light source generates a sequence of EUV light pulses having a pulse sequence frequency. An illumination optics of the illumination system is used to guide the illumination light from the light source to an object field. At least one optical modulation component of the illumination system is preferably modulatable synchronously with the pulse sequence frequency. The result is an illumination system where a homogeneity of an object field illumination is improved.

Illumination system for EUV microlithography

The disclosure relates to an optical system, such as an illumination system or a projection objective of a microlithographic projection exposure apparatus, including such an optical system having a polarization-influencing optical arrangement which permits enhanced flexibility in affording a desired polarization distribution.

Illumination system or projection objective of a microlithographic projection exposure apparatus

Growing community of inventors

Oberkochen, Germany

Damian Fiolka