Samsung Electronics Co., Ltd.

Dali Liu

Sang-Heon Lee

Vladimir Volynets

Gon-jun Kim

Sung-ho Jang

Xinglong Chen

Sang-jin An

Yuri Barsukov

Yong-Ho Lim

Beom-jin Yoo

Shamik Patel

An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH, SiH, CHF, and CHFto a process chamber.

Etching method using remote plasma source, and method of fabricating semiconductor device including the etching method

A wafer clamping apparatus, including a plurality of support pins under a wafer, the plurality of pins to support the wafer; and a side clamp at a lateral side of the wafer, the side clamp to directly contact a lateral side of the wafer to press the wafer, the side clamp to press the wafer in a first direction or a second direction, the first direction and the second direction being different directions.

Wafer clamping apparatus

Growing community of inventors

Yongin-si, South Korea

Dali Liu