International Business Machines Corporation

Dale Curtis McHerron

James L Hedrick

Robert Dennis Miller

Victor Yee-Way Lee

Kenneth Raymond Carter

Mukta G Farooq

Hilton T Toy

Kamal Kumar Sikka

Spyridon Skordas

Charles Hampton Perry

Ravi K Bonam

Maryse Cournoyer

William John Starke

Ramachandra Divakaruni

David Clifford Long

Paul Stephen Andry

Marc Adam Bergendahl

Conal Eugene Murray

Joshua M Rubin

Krishna Gandhi Sachdev

Eric D Perfecto

Vijayeshwar Das Khanna

Mark J LaPlante

Hiroyuki Mori

James John Kelly

Subhash Laxman Shinde

Yang Liu

David B Goland

Matthew S Angyal

Habib Hichri

Christopher Lee Tessler

Suryanarayan G Hegde

Isabel De Sousa

Paul M Gaschke

James Edward Tersigni

Andrew Lu

Kaushal S Patel

Pascale Gagnon

Mark R LaForce

Giovanni Fiorenza

Catherine Dufort

Jerry A Gorrell

Charles C Bureau

Alex A Behfar

Frederick L Taber, Jr

Gobina Das

Dishit Paresh Parekh

A semiconductor element includes a conductive pad. The semiconductor element further includes a first layer of a first polyimide material having an uppermost surface. The first layer includes a via trench extending through the first layer from the uppermost surface to the conductive pad. The semiconductor element further includes a second layer of a second polyimide material arranged in direct contact with the uppermost surface. The second layer includes a line trench extending to the uppermost surface. The semiconductor element further includes a conductive structure arranged in the via trench and the line trench such that copper is in direct contact with the second polyimide material.

Resist patterned redistribution wiring on copper polyimide via layer

A direct bonded heterogeneous integration (DBHi) device includes a substrate including a trench formed in a top surface of the substrate. The DBHi device further includes a first chip coupled to the substrate on a first side of the trench by a plurality of first interconnects. The DBHi device further includes a second chip coupled to the substrate on a second side of the trench by a plurality of second interconnects. The second side of the trench is arranged opposite the first side of the trench. The DBHi device further includes a bridge coupled to the first chip and to the second chip by a plurality of third interconnects such that the bridge is suspended in the trench. The DBHi device further includes a non-conductive paste material surrounding the plurality of third interconnects to further couple the bridge to the first chip and to the second chip.

Direct bonded heterogeneous integration silicon bridge

A method of fabricating a semiconductor structure includes forming a scissionable layer that is able to absorb infrared (IR) radiation, below a first carrier wafer. A first hard-dielectric layer is formed below the scissionable layer. A second hard-dielectric layer is formed on a top surface of a semiconductor wafer. The first dielectric layer is bonded with the second dielectric layer. Connectors on a bottom portion of the semiconductor wafer are formed to provide an electric connection to the semiconductor wafer. A second carrier wafer is connected to the connectors on the bottom portion of the semiconductor wafer. The first carrier wafer is separated from the semiconductor wafer by degrading the scissionable layer with an IR, by passing the IR through the first carrier wafer. A back end of line (BEOL) wiring passing from a top surface of the semiconductor wafer through the first and second dielectric layers is provided.

Oxide-bonded wafer pair separation using laser debonding

The present invention includes a bridge connector with one or more semiconductor layers in a bridge connector shape. The shape has one or more edges, one or more bridge connector contacts on a surface of the shape, and one or more bridge connectors. The bridge connectors run through one or more of the semiconductor layers and connect two or more of the bridge connector contacts. The bridge connector contacts are with a tolerance distance from one of the edges. In some embodiments the bridge connector is a central bridge connector that connects two or more chips disposed on the substrate of a multi-chip module (MCM). The chips have chip contacts that are on an interior corner of the chip. The interior corners face one another. The central bridge connector overlaps the interior corners so that each of one or more of the bridge contacts is in electrical contact with each of one or more of the chip contacts. In some embodiments, overlap is minimized to permit more access to the surface of the chips. Arrays of MCMs and methods of making bridge connects are disclosed. Bridge connector shapes include: rectangular, window pane, plus-shaped, circular shaped, and polygonal-shaped.

Multiple chip bridge connector

A system, a method and a computer program product for analyzing a circuit design provide for discretizing the circuit design into a series of pixels. A fraction of at least one constituent material is determined for each pixel. A deflection is also determined for each pixel. The deflection is predicated upon a planarizing of the pixel, and it is calculated while utilizing an algorithm that includes the fraction of the at least one constituent material. A series of deflections for the series of pixels may be mapped and evaluated.

Deflection analysis system and method for circuit design

A fixture having a bottom plate, top plate and an expansion block interposed between the bottom plate and top plate. A workpiece is positioned between the expansion block and bottom plate. When the fixture is heated, there is a net displacement exerted by the expansion block so as to apply pressure to the workpiece. The pressure applied by the fixture to the workpiece is due solely to the thermal expansion of the fixture when it is heated.

Method and apparatus for application of pressure to a workpiece by thermal expansion

A novel dielectric composition is provided that is useful in the manufacture of integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by imidizing and curing an oligomeric precursor compound comprised of a central polybenzoxazole, polybenzothiazole, polyamic acid or polyamic acid ester segment end-capped at each terminus with an aryl-substituted acetylene moiety such as an ortho-bis(arylethynyl)aryl group, e.g., 3,4-bis(phenylethynyl)phenyl. Integrated circuit devices, integrated circuit packaging devices, and methods of synthesis and manufacture are provided as well.

Dielectric compositions, preparation thereof, and integrated circuit devices fabricated therewith

Process for forming an integrated circuit

A novel dielectric composition is provided that is useful in the manufacture of integrated circuit devices and integrated circuit packaging devices. The dielectric composition is prepared by imidizing and curing an oligomeric precursor compound comprised of a central polybenzoxazole, polybezothiazole polyamic acid ester segment end-capped at each terminus with an aryl-substituted acetylene moiety such as an ortho-bis(arylethynyl)aryl group, e.g., 3,4-bis(phenylethynly)phenyl. Integrated circuit devices, integrated circuit packaging devices, and methods of synthesis and manufacture are provided as well.

Interconnect dielectric compositions, preparation thereof, and integrated circuit devices fabricated therewith

A method to repair Aluminum Nitride (AlN) substrates is disclosed wherein a frequency doubled Q-switched Nd:YAG laser is used to remove unwanted metallurgy. The substrate is place in a liquid filled work chamber which acts to prevent metallic species of AlN from forming. The repair site can be sealed with a novel polymer coating to prevent contamination or corrosion. Repairs can be made to buried or surface metallurgy.

Repair process for aluminum nitride substrates

An electrical connector or interposer for making connection in a high density device electronic environment. The connector is made of a high density array of nickel columns held in a layer of polyimide with each column extending beyond the opposing surfaces of said layer of polyimide. The connector may be used to make temporary or permanent connection to electrical contacts without alignment. Connection may be accomplished by loading forces sufficient to form either an indentation or a penetration of solder ball contacts. Contact to a single chip or a full wafer of chips is facilitated for testing.

High density Z-axis connector

A module for encapsulating a microelectronic device has a polished mating surface around the periphery of the substrate on which is deposited at least one thin film sealband fabricated at a temperature no greater than about 400.degree. C. The sealband has a thickness of less than about 0.001 in. and comprising a metal capable of wetting molten solder which has a melting point no greater than about 400.degree. C. and adhering to the solder after solidification. A layer of the solder is disposed between the sealbands of the cap and substrate forming a hermetic seal for the module.

Hermetic thin film metallized sealband for SCM and MCM-D modules

A multiple-chip probe assembly suitable for wafer testing over a wide temperature range includes a plurality of individual buckling beam probe elements. A support structure supports the plurality of buckling beam probe elements in an arrangement in accordance with an electrical contact footprint for use in electrically contacting multiple chips of a wafer under test and enables buckling movement in a contacting direction of the plurality of buckling beams. The support structure includes a principal support material having a thermal coefficient of expansion (TCE) matched with the wafer under test and a second material other than the principal support material, wherein a contact positioning of the plurality of buckling beam probe elements upon the wafer under test during a testing operation is maintained. The second material prevents an individual probe element from electrically contacting the principal support material.

Large area multiple-chip probe assembly and method of making the same

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Staatsburg, NY, United States of America

Dale Curtis McHerron