Applied Materials, Inc.

Daksh Agarwal

Rajinder Dhindsa

Jason Andrew Kenney

Byungkook Kong

Akhil Mehrotra

Vinay Shankar Vidyarthi

Kyoungjin Lee

Sangwook Kim

SeungHyun Park

Samaneh Sadighi

Abhjeet Bagal

A method, apparatus and system for processing a wafer in a plasma chamber system, which includes at least a plasma generating element and a biasing electrode, include generating a plasma in the plasma chamber system by applying a source RF source power to the plasma generating element for a first period of time of a pulse period of the RF source power, after the expiration of the first period of time, removing the source RF source power, after a delay after the removal of the RF source power, applying an RF bias signal to the biasing electrode for a second period of time to bias the generated plasma towards the wafer, and after the expiration of the second period of time, removing the RF bias signal from the biasing electrode before a next pulse period of the RF source power. The generated plasma biased toward the wafer is used to process the wafer.

Delayed pulsing for plasma processing of wafers

A coating layer is deposited on a patterned feature on a first portion of a substrate. A second portion of the substrate outside the patterned feature is etched. The etching and the depositing are performed in a single pulsed plasma process using at least one of a pulsed source power signal and a pulsed bias power signal.

EUV resist patterning using pulsed plasma

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Sunnyvale, CA, United States of America

Daksh Agarwal