Tokyo Electron Limited

Daisuke Urayama

Eiichi Nishimura

Fumiko Yamashita

Kenji Matsumoto

Akitaka Shimizu

Shigeru Tahara

Hidenori Miyoshi

Masato Kushibiki

Takashi Sone

Nao Koizumi

Wataru Kume

An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

Substrate processing apparatus and substrate processing method

A method MT in an embodiment is a method for etching an etching target layer EL which is included in a wafer W and contains copper. The wafer W includes the etching target layer EL, and a mask MK provided on the etching target layer EL. In the method MT, the etching target layer EL is etched by repeatedly executing a sequence SQ including a first step of generating a plasma of a first gas in a processing containerof a plasma processing apparatusin which the wafer W is accommodated, a second step of generating a plasma of a second gas in the processing container, and a third step of generating a plasma of a third gas in the processing container. The first gas contains a hydrocarbon gas, the second gas contains either a rare gas or a mixed gas of a rare gas and hydrogen gas, and the third gas contains hydrogen gas.

Method for etching copper layer

A plasma processing method of etching a multilayered material having a structure where a first magnetic layerand a second magnetic layerare stacked with an insulating layertherebetween is performed by a plasma processing apparatusincluding a processing chamberwhere a processing space S is formed; and a gas supply unitof supplying a processing gas into the processing space, and includes a first etching process where the first magnetic layer is etched by supplying a first processing gas and generating plasma, and the first etching process is stopped on a surface of the insulating layer; and a second etching process where a residue Z is removed by supplying a second processing gas and generating plasma. The first magnetic layer and the second magnetic layer contain CoFeB, the first processing gas contains Cl, and the second processing gas contains H.

Plasma processing method and plasma processing apparatus

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Miyagi, Japan

Daisuke Urayama