Toray Industries, Inc.

Daisuke Sakii

Seiichiro Murase

Hiroji Shimizu

Junji Wakita

Yugo Tanigaki

Satoshi Kamemoto

A field-effect transistor including at least: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode, wherein the semiconductor layer contains a carbon nanotube, and the gate insulating layer contains a polymer having inorganic particles bound thereto. Provided is a field-effect transistor and a method for producing the field-effect transistor, wherein the field-effect transistor causes decreased leak current and furthermore enables a semiconductor solution to be uniformly applied.

Field effect-transistor, method for manufacturing same, wireless communication device using same, and product tag

To provide a negative-type photosensitive resin composition that is highly sensitive and capable of formation of a low-taper pattern shape and that is capable of providing a cured film that is excellent in heat resistance. A negative-type photosensitive resin composition contains an (A) alkali-soluble resin, a (B) radical polymerizable compound, and a (C) photo initiator, the negative-type photosensitive resin composition being characterized in that the (A) alkali-soluble resin contains one or more species of resins selected from a (A-1) polyimide, a (A-2) polybenzoxazole, a (A-3) polyimide precursor, a (A-4) polybenzoxazole precursor, a (A-5) polysiloxane, and a (A-6) cardo based resin, and that the (B) radical polymerizable compound contains a compound having five ethylenic unsaturated bond groups in a (B-1) molecule, in an amount within the range of 51 to 99 mass %.

Negative-type photosensitive resin composition, cured film, display device that includes the cured film, and production method therefor

A field-effect transistor includes: a substrate; a source electrode; a drain electrode; a gate electrode; a semiconductor layer in contact with the source electrode and with the drain electrode; and a gate insulating layer insulating between the semiconductor layer and the gate electrode. The gate insulating layer comprising at least a polysiloxane having a structural unit represented by a general formula (1): 

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Otsu, Japan

Daisuke Sakii