Fuji Electric Co., Ltd.

Daisuke Mori

Katsunori Ueno

Ryo Tanaka

Shinya Takashima

Masaharu Edo

Hideaki Teranishi

Hideaki Matsuyama

Hirotaka Suda

Chizuru Inoue

A gallium nitride based semiconductor device is provided, where when a thickness of a transition layer is defined as the followings, the thickness of the transition layer is less than 1.5 nm: (i) a distance between a depth position at which an atomic composition of nitrogen element constituting the gallium nitride based semiconductor layer is &#xbd; relative to that at a position on the GaN based semiconductor layer side sufficiently away from the transition layer, and a depth position at which an atomic composition of a metal element is &#xbd; of a value of a maximum if an atomic composition of the metal element constituting an insulating layer has the maximum, or a depth position at which an atomic composition of the metal element is &#xbd; relative to that at a position on the insulating layer side sufficiently away from the transition layer if not having the maximum.

Gallium nitride based semiconductor device and manufacturing method of gallium nitride based semiconductor device

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Hino, Japan

Daisuke Mori