Tokyo Ohka Kogyo Co., Ltd.

Tokyo Institute of Technology

National Institute of Advanced Industrial Science and Technology

Daisuke Kawana

Yoshitaka Komuro

Masatoshi Arai

Akiyoshi Yamazaki

Tomotaka Yamada

Tatsuya Fujii

Teruaki Hayakawa

Kenta Suzuki

Kazufumi Sato

Koki Tamura

Takayuki Hosono

Rin Odashima

Takehiro Seshimo

Taku Hirayama

Yasushi Fujii

Takaya Maehashi

Takashi Kamizono

Shogo Matsumaru

Hisanobu Harada

Seina Yamazaki

Lei Dong

Takatoshi Inari

Hideo Hada

Yoshiyuki Utsumi

Takahiro Dazai

Akiya Kawaue

Ken Miyagi

Kazuyuki Nitta

Jun Iwashita

Kotaro Endo

Takayoshi Mori

Masahito Yahagi

Yasuhiro Yoshii

Tsuyoshi Kurosawa

Tomoyuki Ando

Satoshi Shimatani

Toshikazu Takayama

Kenri Konno

Mitsuo Hagihara

Naoki Yamashita

Hiroto Yamazaki

Hiroshi Shimbori

Nobuhiro Michibayashi

Isamu Takagi

Koji Yonemura

Sho Kataoka

Takehito Seo

Kiwamu Sue

Yusuke Yoshigoe

An alternating copolymer including a structural unit (a0-1) represented by general formula (a0-1) and a structural unit (a0-2) represented by general formula (a0-2) in which Rprepresents a hydrogen atom or the like; Vprepresents a single bond or a divalent linking group; Rpand Rpeach independently represents a hydrocarbon group which may have a substituent, or Rpand Rpare mutually bonded to form a ring; Rprepresents a hydrogen atom, a C1-C5 alkyl group or a C1-C5 halogenated alkyl group; Rprepresents an alkyl group, an alkoxy group, a halogen atom, a halogenated alkyl group, a cyano group or a hydroxy group; Rprepresents a linear or branched aliphatic hydrocarbon group; and m represents an integer of 0 to 4

Alternating copolymer, method of producing alternating copolymer, method of producing polymeric compound, and method of forming resist pattern

Organically modified metal oxide nanoparticles containing two or more cores including a plurality of metal atoms and a plurality of oxygen atoms covalently bonded to the plurality of metal atoms; a first modifying group that is a ligand coordinated to each of the cores and selected from the group consisting of a carboxylic acid carboxylate, a sulfonic acid sulfonate, and a phosphonic acid phosphonate; and a second modifying group that is coordinated to each of the cores and is a ligand having a structure different from that of the first modifying group and/or an inorganic anion, in which organically modified metal oxide nanoparticles have a structure in which the cores are crosslinked through a coordinate bond by at least the first modifying group.

Organically modified metal oxide nanoparticles, organically modified metal oxide nanoparticles-containing solution, organically modified metal oxide nanoparticles-containing resist composition, and resist pattern forming method

A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure of a structural unit (u21) represented by general formula (u2-1) shown below, and the volume ratio of the first block, based on all blocks constituting the block copolymer being 42 to 44 vol %:  In which Rrepresents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and Ris a group derived from a compound represented by formula SHR, wherein Rrepresents a hydrocarbon group having 1 to 5 carbon atoms optionally having a substituent.

Method of producing block copolymer capable of creating specific structure pattern

A resin composition for forming a phase-separated structure containing a block copolymer having a first block and a second block, in which the first block is formed of a constituent unit represented by Formula (b1), the second block is formed of a constituent unit represented by Formula (b2m) and a random copolymer having a constituent unit represented by Formula (b2g), and a ratio of a volume of the first block is 20% to 80% by volume. In the formulas, Ris a hydrogen atom or an alkyl group, Ris a hydrogen atom or a methyl group, Ris an alkyl group which may have a silicon atom, a fluorine atom, a carboxy group, an amino group, a hydroxy group, or a phosphoric acid group, Ris a linear or branched alkylene group having 1 to 10 carbon atoms, which may have a hydroxy group, and Ris a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a halogenated alkyl group having 1 to 5 carbon atoms 

Resin composition for forming phase-separated structure, method for producing structure including phase-separated structure, and block copolymer

A block copolymer including a first block consisting of a polymer having a repeating structure of a structural unit (u1) containing no silicon atom, and a second block consisting of a polymer having a repeating structure of a structural unit (u2) containing a silicon atom, the second block containing a block (b21) consisting of a polymer having a repeating structure represented by general formula (u2-1), and a block (b22) consisting of a polymer having a repeating structure of a structural unit (u22) containing a silicon atom, and the block (b22) is positioned between the first block and the block (b21) (wherein Rrepresents an alkyl group, a halogenated alkyl group, a hydrogen atom, or an organic group having a polar group; and Rrepresents an organic group having a polar group). 

Block copolymer and method of producing the same, and method of producing structure containing phase-separated structure

A block copolymer including a first block and a second block, the first block consisting of a polymer (P1) having a repeating structure of a structural unit (u1) containing in a side chain thereof a hyperbranched structure containing a silicon atom.

Block copolymer, and method of producing structure containing phase-separated structure

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, including a base component which exhibits changed solubility in a developing solution under action of acid and an acid diffusion control agent, the base component including a structural unit represented by general formula (a0-1) shown below in which R represents H, C1-C5 alkyl group or C1-C5 halogenated alkyl group; Ya represents C; Xa represents a group which forms a divalent cyclic hydrocarbon group with Ya; Rato Rarepresents H, C1-C10 monovalent saturated chain hydrocarbon group or C3-C20 monovalent saturated cyclic hydrocarbon group; the acid diffusion control agent containing an acid which exhibits an acid dissociation constant of 1.5 or more. 

Resist composition and method of forming resist pattern

A resist composition which generates acid upon exposure and exhibits changed solubility in a developing solution under action of acid, the resist composition including a base component (A) which exhibits changed solubility in a developing solution under action of acid and an acid generator (B) which generates acid upon exposure, the base component (A) including a resin component having a structural unit (a0) represented by general formula (a0-1) shown below, and the acid generator component (B) containing a compound having a cation moiety having an electron withdrawing group (wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; Ya represents a carbon atom; Xa represents an atomic group required to form an alicyclic hydrocarbon group with Ya; and Rarepresents an aromatic hydrocarbon group optionally having a substituent). 

A positive-type resist composition which generates an acid upon exposure and whose solubility in an alkali developing solution increases under the action of an acid, the composition including a base material component whose solubility in an alkali developing solution increases under the action of an acid; and a compound represented by the following general formula (m0):  Zto Zeach independently represent a substituent having electron withdrawing properties, Rband Rbeach independently represent an alkyl group, an alicyclic hydrocarbon group which may have a substituent, or a hydroxyl group, Rbrepresents an aryl group which may have a substituent, an alkyl group, or an alkenyl group, n1 and n2 represent an integer of 0 to 3, and X0represents an organic anion.

Positive-type resist composition, method for forming resist pattern, photo-reactive quencher, and polymeric compound

A resist composition including a base component containing a polymer (A1) having a structural unit (a5) containing a group represented by general formula (a5-0-1) or (a5-0-2), wherein the amount of the monomer that derives the structural unit (a5) is not more than 100 ppm relative to (A1). In the formulas, each of Qand Qrepresents single bond or divalent linking group, R, Rand Rrepresent organic groups, and Rand Rmay be bonded to each other to form a ring in combination with the sulfur atom, provided that &#x2014;R&#x2014;S(R)(R) has a total of only one aromatic ring or has no aromatic rings, Vrepresents a counter anion, Arepresents an organic group containing anion, and Mrepresents an organic cation having a valency of m, wherein m represents an integer of 1 to 3, provided that Mhas only one aromatic ring or has no aromatic rings. 

Resist composition for EUV or EB, and method of forming resist pattern

There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below:R&#x2014;CH&#x2014;O&#x2014;Y&#x2014;SOA&#x2003;&#x2003;(b1-12)

Compound, acid generator, resist composition, and method of forming resist pattern

A photosensitive resin composition which has a quenching function and satisfactory long-term stability and which, in particular, can be prevented from suffering sensitivity abnormality caused by change with time during storage (change from given sensitivity); and a method of forming a pattern from the composition. The resist composition contains a base resin comprising, as the main component, a silicon-containing polymer which is a siloxane or silsesquioxane polymer or the like, the composition containing, as a quencher, a specific sulfonium compound in place of a nitrogenous compound.

Photosensitive resin composition and method of forming pattern

A thermoacid generator for antireflective film formation, characterized by being represented by the following formula (1): (wherein Rrepresents Calkyl, alkenyl, oxoalkyl, or oxoalkenyl (hydrogen atoms in these groups may have been replaced with fluorine atoms); Rrepresents linear, branched, or cyclic Calkyl, alkenyl, oxoalkyl, or oxoalkenyl, Caryl, or Caralkyl or aryloxoalkyl; Rrepresents hydrogen or alkyl; and Yrepresents a non-nucleophilic counter ion); a composition for forming an antireflective film; and an antireflective film made from the composition. With the thermoacid generator and composition, satisfactory etching resistance and the satisfactory ability to prevent the reflection of short-wavelength light (ability to absorb short-wavelength light) are attained. Furthermore, the antireflective film can inhibit an overlying photoresist film from generating a scum.

Thermoacid generator for antireflection film formation, composition for antireflection film formation, and antireflection film made therefrom

A positive resist composition including a resin component (A) containing an acid dissociable dissolution inhibiting group whose alkali solubility increases under action of acid and an acid generator component (B) that generates acid on exposure, wherein the resin component (A) is a copolymer comprising a first structural unit (a1) derived from a hydroxystyrene and a second structural unit (a2) derived from a (meth)acrylate ester containing an alcoholic hydroxyl group, in which 10 mol % or more and 25 mol % or less of a combined total of hydroxyl groups within the structural units (a1) and alcoholic hydroxyl groups within the structural units (a2) are protected with the acid dissociable dissolution inhibiting groups, and a weight average molecular weight of the copolymer prior to protection with the acid dissociable dissolution inhibiting groups is 2,000 or more and 8,500 or less.

Positive resist composition and method for forming resist pattern

A positive resist composition capable of forming a resist pattern having excellent shape is provided. This composition is a positive resist composition including a base resin component (A) and an acid generator component (B) generating an acid under exposure, which are dissolved in an organic solvent, wherein the base resin component (A) is a silicone resin, and the organic solvent contains propylene glycol monomethyl ether (x1) and a solvent (S2) having a boiling point higher than that of the propylene glycol monomethyl ether.

Positive resist composition

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Daisuke Kawana