Shin-etsu Chemical Co., Ltd.

Daisuke Iwai

Tsuneo Terasawa

Hiroshi Fukuda

Takahiro Kishita

Atsushi Yokohata

Takanobu Tsudera

Takehiko Fukumoto

Takayuki Honma

Hiroshi Suzuki

Shuji Tanaka

Hiromi Nishiwaki

Mitsuyoshi Oshima

Shigeo Okano

Kazuhiro Hirahara

A defect classification method in accordance with the present invention uses two types of images output from the defect inspection device(i.e., the first inspection image generated from a luminance signal sequentially output from a detector SE and the second inspection image generated from a difference of the signals from an adjacent portion in a region where the defect exists). The first inspection image includes information for discriminating unevenness of the defective shape. Also, while it is difficult to discriminate unevenness of the defective shape by the second inspection image, the second inspection image includes information on a luminance distribution emphasizing a defective section. The region of the defective section is extracted from the second inspection image to be applied to the first inspection image and thereby define an arithmetic processing area, and the image processing is performed within the arithmetic processing area to compute a feature amount.

Defect classification method, method of sorting photomask blanks, and method of manufacturing mask blank

A photomask blank having a thin film on a transparent substrate is inspected for defects by irradiating inspection light to a surface region of the blank, collecting the reflected light from the irradiated region via an inspection optical system to form a magnified image of the region, extracting a feature parameter of light intensity distribution from the magnified image, and identifying the bump/pit shape of the defect based on the feature parameter combined with the structure of the thin film. The defect inspection method is effective for discriminating defects of bump or pit shape in a highly reliable manner. On application of the defect inspection method, photomask blanks having no pinhole defects are available at lower costs and higher yields.

Methods for defect inspection, sorting, and manufacturing photomask blank

Disclosed is a method of inspecting a defect present at a surface portion of a photomask blank which includes an optical film, and a thin film. The method includes: selecting and designating an inspection treatment procedure and a criterion for determination of rugged shape of the defect which correspond to modes of the optical film and the thin film of the photomask blank; applying inspection light to a region including the defect while maintaining a distance between the defect and an objective lens of an inspecting optical system, based on the designated inspection treatment procedure, and collecting reflected light from the region irradiated with the inspection light, as a magnified image of the region, through the inspecting optical system; and determining the rugged shape of the defect, from light intensity distribution of the magnified image, based on the designated criterion for determination.

Defect inspecting method, sorting method and producing method for photomask blank

A method of inspecting a defect present at a surface portion of a photomask blank having at least one thin film formed on a substrate by use of the inspecting optical system. The method includes setting the distance between the defect and an objective lens of an inspecting optical system to a defocus distance, applying inspection light to the defect through the objective lens, collecting reflected light from the region irradiated with the inspection light, through the objective lens, as a magnified image, identifying a light intensity variation portion of the magnified image, and determining the rugged shape of the defect on the basis of a variation in light intensity of the light intensity variation portion of the magnified image.

Defect inspecting method, sorting method, and producing method for photomask blank

The defect size of a photomask blank is evaluated. An inspection-target photomask blank is irradiated with inspection light and reflected light of the region of the inspection-target photomask blank irradiated with the inspection light is collected through an objective lens of an inspection optical system as a magnified image of the region. Then, an intensity change part in the light intensity distribution profile of the magnified image is identified. Next, a difference in the light intensity of the intensity change part is obtained and the width of the intensity change part is obtained as the apparent width of the defect. Then, the width of the defect is calculated on the basis of a predetermined conversion expression showing the relationship among the difference in the light intensity, the apparent width of the defect, and the actual width of the defect, and the width of the defect is estimated.

Evaluation method of defect size of photomask blank, selection method, and manufacturing method

High-purity trimethylaluminum has the following impurity contents: organosilicon components&#x2266;0.5 ppm, chlorine components&#x2266;20 ppm, hydrocarbon components&#x2266;1,000 ppm, Ca&#x2266;0.05 ppm, Fe&#x2266;0.05 ppm, Mg&#x2266;0.05 ppm, Na&#x2266;0.05 ppm, Si (Si components other than the organosilicon components)&#x2266;0.07 ppm, Zn&#x2266;0.05 ppm, and S&#x2266;0.05 ppm. The high-purity trimethylaluminum can be obtained by removing impurities from crude trimethylaluminum through distillation and evaporation.

High-purity trimethylaluminum and purification method of crude trimethylaluminum

A method of purifying an organometallic compound comprising

Purification method for organometallic compounds and organometallic compounds obtained therefrom

An organometallic compound vaporizing and feeding system includes a carrier gas feed passageway connecting a carrier gas source to a container containing an organometallic compound MO and having a carrier gas mass flow controller, an MO gas passageway connecting the container to an in-line monitor for transporting the MO gas, a sample gas passageway connecting the in-line monitor to a sample inlet of an ICP spectrometer, a standard gas passageway connecting a gas cylinder filled with a calibration standard gas to the sample gas passageway and having a standard gas mass flow controller, and a diluent gas passageway connected to the standard gas passageway for passing a diluent gas for adjusting the concentration of the standard gas and having a diluent gas mass flow controller.

Organometallic compound vaporizing/feeding system

Disclosed are compounds suitable for use as raw materials which enable cis-olefin compounds useful as physiologically active substances such as the sex pheromones of various insects, or as intermediates for the synthesis thereof to be prepared on an industrial scale at a reasonable cost, and processes for the preparation of cis-olefin compounds by using the same. For this purpose, novel compounds (i.e., 1-halo-cis-3-tetradecenes) of the general formula (I)

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Joetsu, Japan

Daisuke Iwai