Sumco Corporation

Daisuke Hieda

Naoya Nonaka

Toshiyuki Isami

Koudai Moroiwa

Tatsuo Kusumoto

Hisashi Uchino

Hiroaki Ishizaki

A producing method of a handle wafer for a bonded wafer produced by bonding an active wafer and the handle wafer through an insulation film includes: preparing a handle wafer body made from a monocrystalline silicon wafer; forming an oxide film on the handle wafer body; depositing a polycrystalline silicon layer on the oxide film; forming a protective oxide film on a surface of the polycrystalline silicon layer; and polishing to remove the protective oxide film and polishing the polycrystalline silicon layer.

Method for producing support substrate for bonded wafer, and support substrate for bonded wafer

A disc-shaped susceptor includes a plurality of recesses that are aligned in a circumferential direction on an upper surface of the susceptor and in which wafers are respectively mounted, in which the susceptor is formed so that a center of the susceptor is concave toward a lower surface thereof from an outer edge thereof.

Susceptor, vapor deposition apparatus, vapor deposition method and epitaxial silicon wafer

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Tokyo, Japan

Daisuke Hieda