Applied Materials, Inc.

Dai-Wen Tang

Benjamin Schwarz

Chung Liu

Hui Sun

Embodiments herein provide apparatus and methods for performing an etching process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has having a first group of openings defined therebetween and etching the spacer layer disposed on the substrate while forming an oxidation layer on the spacer layer.

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Taipei, Taiwan

Dai-Wen Tang